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MMBT2907A-G

Part No MMBT2907A-G
Manufacturer Comchip Technology
Catalog Transistors (BJT) - Single
Description TRANS PNP 60V 0.6A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Comchip Technology
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage 60V
Max Vce (sat) 1.6V @ 50mA, 500mA
Collector Cut-off Current(Max) 20nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 150mA, 10V
Maximum Power Dissipation 350mW
Frequency - Transition 200MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23
Win Source Part Number 208618-MMBT2907A-G
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Automotive, Power Management
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian MMBT2907A-G CAD Model

Description

The MMBT2907A-G from Comchip Technology is a PNP transistor with a maximum collector-emitter breakdown voltage of 60V.

  • Maximum collector-emitter breakdown voltage: 60V
  • Typical gain (hFE): 100 @ 150mA and 10V
  • Suitable for: various applications in the industrial, automotive, and power management fields
  • Case: SOT-23
  • Maximum power dissipation: 350mW

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,240+ $0.0467 $57.9080
3,015+ $0.0383 $115.4745
4,660+ $0.0372 $173.3520
6,435+ $0.0360 $231.6600
8,310+ $0.0348 $289.1880
11,115+ $0.0312 $346.7880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 1240 pcs
Order Increment : 1 pcs
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