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Same model may have multiple batches, images only for reference.
C3M0040120K Real Image
Same model may have multiple batches, images only for reference.

C3M0040120K

Part No C3M0040120K
Manufacturer Cree/Wolfspeed
Catalog Transistors - FETs, MOSFETs - RF
Description 1200V 40MOHM SIC MOSFET / N-Channel 1200 V 66A (Tc) 326W (Tc) Through Hole TO-247-4L
Datasheet
C3M0040120K Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Wolfspeed, Inc.
Packaging Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 53.5mOhm @ 33.3A, 15V
Vgs(th) (Max) @ Id 3.6V @ 9.2mA
Gate Charge (Qg) (Max) @ Vgs 99 nC @ 15 V
Vgs (Max) +15V, -4V
Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 1000 V
Power Dissipation (Max) 326W (Tc)
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Through Hole
Supplier Device Package TO-247-4L
Case / Package TO-247-4
Base Product Number C3M0040120
Moisture Sensitivity Level (MSL) Not Applicable
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number -3312-C3M0040120K,1697-C3M0040120K
Standard Package 30
Win Source Part Number 1324550-C3M0040120K
Ultra Librarian 3D Model Ultra Librarian C3M0040120K CAD Model

Description

The Wolfspeed, Inc. 1324550-C3M0040120K is a SiCFET (Silicon Carbide) N-channel transistor with a drain to source voltage (Vdss) of 1200V.

  • Continuous Drain Current (Id) @ 25°C: 66A (Tc)
  • Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
  • Power Dissipation (Max): 326W (Tc)
  • Supplier Device Package: TO-247-4L

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $10.3345 $51.6725
12+ $8.4796 $101.7552
19+ $8.2146 $156.0774
26+ $7.9496 $206.6896
33+ $7.6846 $253.5918
44+ $6.8897 $303.1468
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