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C3M0060065K

Part No C3M0060065K
Manufacturer Cree/Wolfspeed
Catalog Transistors - FETs, MOSFETs - RF
Description SICFET N-CH 650V 37A TO247-4L / N-Channel 650 V 37A (Tc) 150W (Tc) Through Hole TO-247-4L
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Wolfspeed, Inc.
Packaging Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 79mOhm @ 13.2A, 15V
Vgs(th) (Max) @ Id 3.6V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 15 V
Vgs (Max) +15V, -4V
Input Capacitance (Ciss) (Max) @ Vds 1020 pF @ 600 V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Through Hole
Supplier Device Package TO-247-4L
Case / Package TO-247-4
Base Product Number C3M0060065
RoHS Status ROHS3 Compliant
MSL Level Not Applicable
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 1697-C3M0060065K,-3312-C3M0060065K
Standard Package 30
Win Source Part Number 1324548-C3M0060065K
Ultra Librarian 3D Model Ultra Librarian C3M0060065K CAD Model

Description

The Wolfspeed, Inc. C3M0060065K is a N-channel SiCFET (Silicon Carbide) MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Voltage: 650V
  • Continuous Drain Current: 37A @ 25°C
  • Package: TO-247-4L
  • Maximum Power Dissipation: 150W
  • Gate-Source Threshold Voltage: 3.6V @ 5mA
  • Maximum Gate Charge: 46nC @ 15V
  • Maximum Rds On @ Id,Vgs: 79mOhm @ 13.2A, 15V
  • Temperature Range: -40°C to 175°C (TJ)
  • Input Capacitance: 1020pF @ 600V

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $13.9950 $55.9800
8+ $13.1092 $104.8736
12+ $12.6663 $151.9956
17+ $11.7806 $200.2702
23+ $11.3377 $260.7671
28+ $10.8948 $305.0544
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,700 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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