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CG2H30070F Real Image CG2H30070F Real Image1 CG2H30070F Real Image2
Same model may have multiple batches, images only for reference.
CG2H30070F Real Image CG2H30070F Real Image1 CG2H30070F Real Image2
CG2H30070F Real Image CG2H30070F Real Image1 CG2H30070F Real Image2
Same model may have multiple batches, images only for reference.

CG2H30070F

Part No CG2H30070F
Manufacturer Cree/Wolfspeed
Catalog Transistors - FETs, MOSFETs - RF
Description RF MOSFET HEMT 28V
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr Cree/Wolfspeed
Series GaN
Package Tray
Product Status Active
Technology GaN HEMT
Frequency 0Hz ~ 4GHz
Gain 12dB
Voltage - Test 28 V
Current - Test 1 A
Power - Output 75W
Voltage - Rated 120 V
Package / Case 440224
Supplier Device Package 440224
Base Product Number CG2H30070
Standard Package 50 pcs
Moisture Sensitivity Level (MSL) Not Applicable
ECCN DISC 3A001B3A4
HTSUS 8541.29.0095
Win Source Part Number 866346-CG2H30070F
Ultra Librarian 3D Model Ultra Librarian CG2H30070F CAD Model

Description

The GaN HEMT RF FET, MOSFET by Cree/Wolfspeed is a high-performance electronic component designed for use in discrete semiconductor products.

  • Rated Voltage: 120V
  • Frequency Range: 0Hz to 4GHz
  • Current Test: 1A
  • Gain: 12dB
  • Power Output: 75W
  • Package: Tray
  • Standard Package: 50 pcs

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