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Same model may have multiple batches, images only for reference.
CY14B116N-BZ25XI Real Image
Same model may have multiple batches, images only for reference.

CY14B116N-BZ25XI

Part No CY14B116N-BZ25XI
Manufacturer Cypress Semiconductor Corp
Catalog RAM
Description NO WARRANTY / NVSRAM (Non-Volatile SRAM) Memory IC 16Mb (1M x 16) Parallel 25 ns 165-FBGA (15x17)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs)>Memory
Mfr Cypress Semiconductor Corp
Package Tray
Memory Type Non-Volatile
Memory Format NVSRAM
Technology NVSRAM (Non-Volatile SRAM)
Memory Size 16Mb (1M x 16)
Memory Interface Parallel
Write Cycle Time - Word, Page 25ns
Access Time 25 ns
Voltage - Supply 2.7V ~ 3.6V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting SMD (SMT)
Package / Case 165-LBGA
Supplier Device Package 165-FBGA (15x17)
Base Product Number CY14B116
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B2A
HTSUS 8542.32.0041
Other Names CYPCYPCY14B116N-BZ25XI,-CY14B116N-BZ25XI,2015-CY14B116N-BZ25XI,2156-CY14B116N-BZ25XI
Standard Package 105
Win Source Part Number 1054022-CY14B116N-BZ25XI
Ultra Librarian 3D Model Ultra Librarian CY14B116N-BZ25XI CAD Model

Description

The Cypress Semiconductor Corp CY14B116N-BZ25XI is a memory IC that has a capacity of 16Mb (1M x 16).

  • Series: CY14B116S-BZ25XI, CY14B116S-BZ25XIT, CY14V116N-BZ30XI, IS61QDB21M18A-250B4LI
  • Interface: Parallel
  • Voltage Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C to 85°C (TA)
  • Access Time: 25 ns
  • Package: Tray
  • MSL Level: 3 (168 Hours)
  • REACH Status: REACH unaffected

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