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CY62148G-45ZSXIT

Part No CY62148G-45ZSXIT
Manufacturer Cypress Semiconductor Corp
Catalog IT infrastructure Memory
Description SRAM 512kx8
Sample
Rohs State rohs
ECAD Module
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Category IT infrastructure Memory
Win Source Part Number 1454547-CY62148G-45ZSXIT
Manufacturer Cypress Semiconductor Corp
Package Tape & Reel (TR);Cut Tape (CT)
Product Status Active
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 4Mbit
Memory Organization 512K x 8
Memory Interface Parallel
Write Cycle Time - Word, Page 45ns
Access Time 45ns
Voltage - Supply 4.5 V ~ 5.5 V
Operating Temperature -40°C ~ 85°C (TA)
Grade -
Mounting Type Surface Mount
Package / Case 32-SOIC (0.400", 10.16mm Width)
Supplier Device Package 32-TSOP II
Ultra Librarian 3D Model Ultra Librarian CY62148G-45ZSXIT CAD Model

Description

The CY62148G-45ZSXIT is a static random-access memory (SRAM) device from Cypress, now part of Infineon Technologies, offering a storage capacity of 512K x 8 bits. This memory component distinguishes itself with its low latency and fast access times, typically around 45 nanoseconds, which makes it particularly suited for high-performance computing tasks and real-time applications. As an SRAM, it offers the advantages of simple interfacing with no need for refresh cycles, unlike DRAM, resulting in faster and more reliable data access. It operates within industrial temperature ranges, making it an ideal candidate for demanding environments and applications ranging from automotive systems, industrial control, telecommunications infrastructure, to portable electronics. The component’s generous storage capacity and reliable performance under various conditions make it a favorable choice for designers looking to optimize their systems for speed and stability.

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