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S29AS008J70TFI040

Part No S29AS008J70TFI040
Manufacturer Cypress Semiconductor Corp
Catalog Unclassified Memory
Description IC FLASH 8MBIT PARALLEL 48TSOP / FLASH - NOR Memory IC 8Mb (1M x 8, 512K x 16) Parallel 70 ns 48-TSOP
Sample
Rohs State rohs
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Category Integrated Circuits (ICs)>Memory
Mfr Cypress Semiconductor Corp
Series AS-J
Package Tray
Product Status Obsolete
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 8Mb (1M x 8, 512K x 16)
Memory Interface Parallel
Write Cycle Time - Word, Page 70ns
Access Time 70 ns
Voltage - Supply 1.65V ~ 1.95V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting SMD (SMT)
Package / Case 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 48-TSOP
Other Names S29AS008J70TFI040,428-4471,-S29AS008J70TFI040
Standard Package 96
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.32.0071
Win Source Part Number 1255721-S29AS008J70TFI040
Ultra Librarian 3D Model Ultra Librarian S29AS008J70TFI040 CAD Model

Description

The S29AS008J70TFI040 is an 8 Mbit (1M x 8) accelerated flash memory device manufactured by Cypress Semiconductor Corp. It is designed for embedded systems requiring fast read access times and low power consumption. This device is commonly used for storing code and data in applications where quick boot-up and execution are critical.

Applications:

  • Embedded systems
  • Microcontroller-based applications
  • Industrial control systems
  • Consumer electronics
  • Networking equipment

Features:

  • 8 Mbit (1M x 8) memory organization
  • Fast read access time (typically 70 ns)
  • Accelerated programming mode
  • Sector erase architecture
  • Program/Erase Suspend/Resume
  • Low power consumption
  • Industry-standard pinout
  • Single power supply operation

Benefits:

  • Enables fast boot-up and execution of code in embedded systems.
  • Reduces system power consumption, extending battery life in portable applications.
  • Simplifies system design with single-voltage operation and industry-standard pinout.
  • Provides a reliable and durable storage solution.
  • Allows for flexible memory management with sector erase capability.
  • Facilitates easy integration into existing systems.

Additional Details:

The S29AS008J70TFI040 features an accelerated programming mode, which allows for faster programming times compared to standard flash memory devices. The sector erase architecture enables granular memory updates and efficient data management. The program/erase suspend/resume feature allows the system to perform other tasks during program/erase operations, improving overall system performance. It is available in various packages, including TSOP and PLCC, to meet different application requirements. Specific performance characteristics, such as program and erase times, endurance cycles, and operating temperature range, can be found in the device's datasheet. This flash memory is designed to offer high reliability and data retention, making it suitable for critical data storage applications.

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