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1N5817M-13

Part No 1N5817M-13
Manufacturer Diodes Incorporated
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTTKY 20V 1A MELF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 20V
Current - Average Rectified (Io) 1A
Voltage - Forward (Vf) (Max) @ If 450mV @ 1A
Speed(Frequency) Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr 1mA @ 20V
Mounting SMD (SMT)
Case / Package MELF
Operating Temperature - Junction -60°C to 125°C
Win Source Part Number 1002322-1N5817M-13
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 1N5817M-13 CAD Model

Description

Product Overview: 1N5817M-13 from Diodes Incorporated

The 1N5817M-13 is a robust and efficient Schottky barrier rectifier designed and manufactured by Diodes Incorporated, a leading global provider of high-quality semiconductor products. This component is well-suited for a variety of applications that require fast switching and low voltage drop, making it an ideal choice for power supply, DC-DC converter, and high-frequency rectification circuits.

Key Features

  • Low Forward Voltage Drop: The 1N5817M-13 offers a low forward voltage drop, which reduces power loss and improves efficiency in your circuits. This characteristic is particularly important in applications where power conservation is critical.
  • High Surge Capability: With its high surge current capability, this diode can withstand transient overcurrent conditions, ensuring reliability and durability in demanding situations.
  • Fast Switching Speed: The fast switching action of the 1N5817M-13 minimizes losses during the switching process, which is essential for high-frequency operations.
  • Guard Ring Die Construction: The guard ring design provides enhanced ruggedness and long-term reliability, which is beneficial for voltage stress conditions.

Electrical Characteristics

  • Maximum Average Forward Rectified Current: 1.0A
  • Peak Repetitive Reverse Voltage: 20V
  • Maximum Instantaneous Forward Voltage: 0.45V at 1.0A
  • Operating Junction Temperature Range: -65°C to +125°C

Package and Quality

The 1N5817M-13 comes in an SMA (DO-214AC) package, which is compact and offers excellent power dissipation characteristics. This package is compatible with automated pick-and-place equipment, simplifying the assembly process. Diodes Incorporated is committed to high standards of quality, and this product is no exception, meeting stringent industry certifications and regulations.

Applications

Thanks to its versatile features, the 1N5817M-13 is suitable for a wide range of applications, including:

  • Switching power supplies
  • Converters
  • Free-wheeling diodes
  • Reverse battery protection
  • DC-DC modules

With its combination of efficiency, reliability, and versatility, the 1N5817M-13 Schottky barrier rectifier from Diodes Incorporated is an excellent choice for your circuit design needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.3172 $58.6820
445+ $0.2603 $115.8335
690+ $0.2522 $174.0180
950+ $0.2441 $231.8950
1,225+ $0.2359 $288.9775
1,640+ $0.2115 $346.8600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,170 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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