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2DB1132R-13

Part No 2DB1132R-13
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 32V 1A SOT89-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 32V
Max Vce (sat) 500mV @ 50mA, 500mA
Collector Cut-off Current(Max) 500nA (ICBO)
Typical Gain (hFE) (Min) 180 @ 100mA, 3V
Maximum Power Dissipation 1W
Frequency - Transition 190MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-89-3
Win Source Part Number 106571-2DB1132R-13
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2DB1132R-13 CAD Model

Description

Product Overview: 2DB1132R-13 by Diodes Incorporated

The 2DB1132R-13 is a robust PNP bipolar junction transistor (BJT) from the reputable semiconductor manufacturer Diodes Incorporated. This high-quality electronic component is designed to cater to a wide range of applications, particularly where efficient amplification and switching are required. The device is a testament to Diodes Incorporated's commitment to providing reliable and high-performance components for the electronics industry.

Key Features

  • Type: PNP Bipolar Junction Transistor
  • Package: Comes in a convenient SOT-89 package which is widely used in the industry for its compact size and excellent thermal performance.
  • Collector-Emitter Voltage (V<sub>CEO): It supports a collector-emitter voltage of up to -40V, providing a good margin for a variety of electronic circuits.
  • Collector Current (I<sub>C): The transistor can handle a continuous collector current of up to -1A, making it suitable for moderate power applications.
  • Power Dissipation: With a power dissipation of up to 1W, this transistor can manage a fair amount of power, ensuring durability in demanding situations.
  • DC Current Gain (h<sub>FE): It features a high DC current gain, which is crucial for amplification applications, ensuring that the signal is sufficiently amplified with minimal input.
  • Compliance: The 2DB1132R-13 is RoHS compliant, adhering to environmental standards that restrict the use of hazardous substances in electronic components.

Applications

The versatility of the 2DB1132R-13 makes it suitable for a diverse array of applications. It is commonly used in:

  • Power management circuits
  • Signal amplification
  • Load switch circuits
  • Driver stages in audio amplifiers
  • Various switching applications

Quality and Reliability

Diodes Incorporated ensures that the 2DB1132R-13 meets the highest quality and reliability standards. The device is manufactured using industry-leading processes that guarantee its performance even under challenging conditions. Engineers and designers can confidently incorporate this transistor into their designs, knowing it will provide consistent operation and longevity.

For detailed specifications, application notes, and additional resources, customers are advised to consult the official datasheet provided by Diodes Incorporated. This will ensure the correct and safe usage of the 2DB1132R-13 in their electronic projects.

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Pricing & Ordering

Quantity Unit Price Ext. Price
310+ $0.1630 $50.5300
660+ $0.1526 $100.7160
1,020+ $0.1475 $150.4500
1,460+ $0.1372 $200.3120
1,895+ $0.1320 $250.1400
2,365+ $0.1269 $300.1185
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,339 pieces
MOQ: 310 pcs
Order Increment : 1 pcs
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