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2DB1182Q-13

Part No 2DB1182Q-13
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 32V 2A TO252 / 32V PNP SURFACE MOUNT TRANSISTOR IN TO252
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Diodes Incorporated
Packaging Reel
Transistor Type PNP
Current - Collector (Ic) (Maximum) 2A
Voltage - Collector Emitter Breakdown (Maximum) 32V
Vce Saturation (Maximum) at Ib, Ic 800mV at 200mA, 2A
Current - Collector Cutoff (Maximum) 1μA (ICBO)
DC Current Gain (hFE) (Min) at Ic, Vce 120 at 500mA, 3V
Power - Max 10W
Frequency - Transition 110MHz
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-252
Part Number Series 2DB1182
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Popularity High
Supply and Demand Status Sufficient
Win Source Part Number 801121-2DB1182Q-13
Ultra Librarian 3D Model Ultra Librarian 2DB1182Q-13 CAD Model

Description

Product Overview: 2DB1182Q-13 by Diodes Incorporated

The 2DB1182Q-13 is a robust PNP bipolar junction transistor (BJT) designed and manufactured by Diodes Incorporated, a leading global provider of high-quality semiconductor products. This transistor is engineered to deliver reliable performance for a wide range of applications, making it a versatile component for electronics designers and engineers.

Key Features:

  • High Current Capacity: The 2DB1182Q-13 is capable of handling continuous collector currents up to -1A, making it suitable for high-power applications.
  • Low Saturation Voltage: With a low collector-emitter saturation voltage of typically -0.5V, this transistor ensures efficient operation and helps to minimize power loss.
  • Complementary NPN Type: It has a complementary NPN type available, providing flexibility in designing push-pull and other complementary configurations.
  • RoHS Compliant: The product is RoHS compliant, which means it adheres to the strict regulations set for the restriction of hazardous substances in electrical and electronic equipment.
  • Package: The 2DB1182Q-13 is offered in a compact SOT-89 package, which is ideal for space-constrained applications.

Applications:

The 2DB1182Q-13 is designed for general-purpose amplifier and switching applications. Its robust performance characteristics make it suitable for a variety of uses, including but not limited to:

  • Power management circuits
  • Load switches
  • Signal amplification
  • Regulator circuits
  • Driver stages in audio amplifiers

Quality and Reliability:

Diodes Incorporated is committed to providing high-quality products that meet the demanding reliability standards of the electronics industry. The 2DB1182Q-13 is built to offer excellent performance stability and longevity, ensuring that it can withstand the rigors of various operating conditions.

For detailed specifications, technical datasheets, and additional information on the 2DB1182Q-13 PNP transistor, customers are encouraged to visit the official Diodes Incorporated website or contact their local sales representative.

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