2N7002E-7-G - N-Channel Enhancement Mode Field Effect Transistor

The 2N7002E-7-G is a high-performance, N-channel enhancement mode field effect transistor (MOSFET) designed and manufactured by Diodes Incorporated. This compact and efficient MOSFET is a popular choice for a wide range of applications due to its low on-resistance and high switching speed.

Encased in a small SOT-23 package, the 2N7002E-7-G is perfect for space-constrained applications that require a high level of energy efficiency. With its continuous drain current (I<sub>D) of 115 mA and a maximum drain-source voltage (V<sub>DS) of 60V, this MOSFET is suitable for stepping down higher voltages in power management circuits, as well as for driving small loads such as LEDs or small motors.

The device features a low threshold voltage (V<sub>GS(th)), making it easy to drive with low-voltage logic signals, which is particularly beneficial for battery-powered devices and portable electronics. Additionally, its fast switching characteristics are ideal for high-speed circuits, contributing to reduced power loss and improved overall efficiency.

The 2N7002E-7-G also boasts a low input capacitance (C<sub>iss), which further enhances its switching performance. Its robustness is reflected in its 1.8W power dissipation and the ability to handle pulse currents effectively, ensuring reliability even under stressful conditions.

Diodes Incorporated has designed the 2N7002E-7-G with the environment in mind. The product is compliant with RoHS standards, meaning it is free from hazardous substances, making it a safe choice for consumer electronics. The green "G" in the product name signifies that it is a lead-free and environmentally friendly option for designers looking to create sustainable products.

Whether you're designing power management systems, motor controls, or looking to switch or amplify electronic signals, the 2N7002E-7-G from Diodes Incorporated offers a reliable and efficient solution that engineers can trust.