Diodes Incorporated BC846B-7-F NPN Transistor
The BC846B-7-F is a high-quality NPN bipolar junction transistor (BJT) from Diodes Incorporated, designed for general-purpose amplifier and switching applications. This versatile transistor is a fundamental component for a wide range of electronic circuits, offering reliable performance and consistency.
Key Features
- Type: NPN
- Package: SOT-23
- Collector-Emitter Voltage (VCEO): 65V
- Collector Current (IC): 100mA
- DC Current Gain (hFE): 200-450 at 2mA, VCE=5V
- Transition Frequency (fT): 100MHz
- Operating Temperature Range: -55°C to +150°C
- RoHS Compliant: Yes
The BC846B-7-F transistor is encapsulated in a small SOT-23 surface-mount package, which is suitable for automated assembly processes and helps in reducing the PCB space required. With a collector-emitter voltage of up to 65V and a collector current capacity of 100mA, this transistor can handle moderate voltage and current levels, making it suitable for a variety of electronic applications.
One of the notable characteristics of the BC846B-7-F is its high current gain bandwidth product, with a transition frequency of 100MHz. This feature makes it an excellent choice for applications requiring high-speed switching and amplification. The DC current gain (hFE) is also noteworthy, ensuring that the transistor can amplify the input signal efficiently, which is crucial for consistent performance in amplification circuits.
The operating temperature range of -55°C to +150°C allows the BC846B-7-F to function reliably in extreme environmental conditions, which is essential for industrial and automotive applications that demand high durability.
Additionally, this product is in compliance with the RoHS directive, which means it is manufactured with environmentally friendly materials and processes, free from harmful substances like lead, making it a responsible choice for electronic manufacturers concerned with sustainability.
Overall, the BC846B-7-F from Diodes Incorporated is a robust and reliable component for designers and engineers looking for a general-purpose NPN transistor that offers a balance of performance, efficiency, and compact form factor.