Diodes Incorporated BC847BT-7-F NPN Bipolar Transistor

The BC847BT-7-F from Diodes Incorporated is a high-performance NPN bipolar (BJT) transistor that is designed for general-purpose amplification and switching applications. This small-signal transistor is a fundamental component in a wide range of electronic circuits, offering a combination of low voltage operation and high current capability.

Key Specifications:

• Transistor Type: NPN
• Package: SOT-523
• Configuration: Single
• Collector-Emitter Voltage (Vceo): 45V
• Collector-Base Voltage (Vcbo): 50V
• Emitter-Base Voltage (Vebo): 6V
• Collector Current (Ic Max): 100mA
• Power Dissipation (Pd): 200mW
• DC Current Gain (hFE): 200 to 450 at 2mA, 5V
• Operating Temperature Range: -55°C to +150°C

The BC847BT-7-F transistor is packaged in a small SOT-523 package, which is ideal for space-constrained applications. It features a collector-emitter voltage of 45V and a collector-base voltage of 50V, making it suitable for moderate voltage applications. With a collector current of up to 100mA, it can handle a fair amount of current for its size, and a power dissipation of 200mW allows it to manage moderate power levels.

One of the key characteristics of the BC847BT-7-F is its DC current gain (hFE) range of 200 to 450 at 2mA, 5V, which ensures good amplification characteristics for a variety of applications. The wide operating temperature range of -55°C to +150°C makes it reliable for use in harsh environments, ensuring consistent performance under varying conditions.

Whether you are designing a simple amplification circuit or looking for a reliable switch for your digital applications, the BC847BT-7-F provides the necessary performance and reliability. Its small form factor, combined with Diodes Incorporated's reputation for quality, makes it an excellent choice for designers and hobbyists alike.

Overall, the BC847BT-7-F is a versatile and dependable component that can be incorporated into numerous electronic projects, ranging from DIY to industrial applications, where a general-purpose NPN transistor is required.