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BSS123-7-F

Part No BSS123-7-F
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 170MA SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Input Capacitance 60pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300mW (Ta)
Maximum Rds On at Id,Vgs 6 Ohm @ 170mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 012148-BSS123-7-F
Family Name BSS123
Introduction Date September 19, 1997
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2025
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSS123-7-F CAD Model

Description

Product Overview: BSS123-7-F

The BSS123-7-F, manufactured by Diodes Incorporated, is a high-performance N-Channel MOSFET that provides efficient power control and conversion for a broad range of applications. This compact and versatile transistor is designed to meet the stringent requirements of modern electronic circuits, offering a perfect blend of low on-resistance and fast switching speeds.

Key Features

  • Low On-Resistance: The BSS123-7-F boasts an exceptionally low on-resistance, which ensures minimal power loss and heat generation during operation, leading to higher efficiency in electronic circuits.
  • High-Speed Switching: This MOSFET is capable of high-speed switching, which makes it suitable for high-frequency applications such as power supplies, converters, and PWM circuits.
  • Surface Mount Package: The device comes in an SOT-23 package, which is ideal for space-constrained applications, allowing for a more compact and integrated circuit design.
  • Drain-Source Voltage: It supports a drain-source voltage (Vds) of 100V, providing a wide operating range for various electronic designs.
  • Continuous Drain Current: The BSS123-7-F can handle a continuous drain current (Id) of 170mA, which is sufficient for low to medium power applications.

Applications

The versatility of the BSS123-7-F makes it suitable for a wide array of applications. It is commonly used in load switch circuits, power management solutions, and as a switch for various signal processing tasks. Its high-speed switching capability also makes it an excellent choice for PWM applications and high-efficiency DC-DC converters. Additionally, it can be found in battery-powered devices, portable electronics, and telecommunications equipment, where power efficiency is critical.

Quality and Reliability

Diodes Incorporated is known for its commitment to quality, and the BSS123-7-F is no exception. It is produced with the highest manufacturing standards to ensure reliability and performance consistency. This MOSFET is RoHS compliant and is designed to meet the environmental and regulatory standards of the electronics industry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,505+ $0.0333 $50.1165
3,210+ $0.0312 $100.1520
4,970+ $0.0302 $150.0940
7,145+ $0.0280 $200.0600
9,260+ $0.0270 $250.0200
11,585+ $0.0259 $300.0515
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 990,000 pieces
MOQ: 1505 pcs
Order Increment : 1 pcs
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