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BSS127SSN-7

Part No BSS127SSN-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 50MA SC59
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 50mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 1.08nC @ 10V
Max Input Capacitance 21.8pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 610mW (Ta)
Maximum Rds On at Id,Vgs 160 Ohm @ 16mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-59
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 012153-BSS127SSN-7
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSS127SSN-7 CAD Model

Description

Introducing the BSS127SSN-7 MOSFET from Diodes Incorporated

Diodes Incorporated presents the BSS127SSN-7, a high-performance, N-channel enhancement mode field-effect transistor (MOSFET) that is designed to deliver efficiency and reliability for a wide range of applications. This semiconductor device is a testament to Diodes Incorporated's commitment to providing innovative solutions that meet the evolving needs of the electronics industry.

Key Features

  • Low On-Resistance: The BSS127SSN-7 boasts an extremely low on-resistance, which translates to reduced power loss and enhanced energy efficiency during operation.
  • High-Speed Switching: Engineered for fast switching applications, this MOSFET can handle high-frequency operations with ease, making it ideal for power management circuits.
  • Compact SOT-23 Packaging: Enclosed in a small SOT-23 package, the BSS127SSN-7 is perfect for space-constrained applications, without compromising on performance.
  • RoHS Compliant: This product complies with the Restriction of Hazardous Substances (RoHS) directive, ensuring it meets environmental standards and is free from harmful substances.

Applications

The versatility of the BSS127SSN-7 MOSFET makes it suitable for a diverse range of applications, including:

  • Power Management Circuits
  • DC/DC Converters
  • Load Switches
  • Battery Management Systems
  • Motor Control Units

Technical Specifications

With a threshold voltage as low as 2.1V, the BSS127SSN-7 can be driven by low-voltage logic signals, simplifying circuit design. Its continuous drain current of 500mA ensures that it can handle moderate power loads with ease. Additionally, the device can sustain a maximum drain-source voltage of 600V, providing a wide safety margin for most low to medium voltage applications.

Quality and Reliability

Diodes Incorporated is known for its stringent quality control measures, and the BSS127SSN-7 is no exception. Each unit is rigorously tested to ensure it meets the high standards expected by consumers in terms of performance and durability. With its superior thermal performance and long-term reliability, the BSS127SSN-7 is an excellent choice for designers looking to optimize their electronic designs for both performance and size.

For detailed product specifications, technical documents, and application support, visit the Diodes Incorporated website or contact their customer service team.

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Pricing & Ordering

Quantity Unit Price Ext. Price
440+ $0.1137 $50.0280
940+ $0.1064 $100.0160
1,465+ $0.1027 $150.4555
2,100+ $0.0954 $200.3400
2,730+ $0.0917 $250.3410
3,410+ $0.0881 $300.4210
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,800 pieces
MOQ: 440 pcs
Order Increment : 1 pcs
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