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BSS84W-7-F

Part No BSS84W-7-F
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 50V 130MA SOT323
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2V @ 1mA
Max Input Capacitance 45pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200mW (Ta)
Maximum Rds On at Id,Vgs 10 Ohm @ 100mA, 5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-323
Dimension SC-70, SOT-323
Win Source Part Number 012168-BSS84W-7-F
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSS84W-7-F CAD Model

Description

Introducing the BSS84W-7-F P-Channel MOSFET by Diodes Incorporated

The BSS84W-7-F is a high-performance P-Channel MOSFET brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This MOSFET is designed to offer efficient power control and management in a wide range of electronic applications. Its compact form factor and low on-resistance make it an ideal choice for power-sensitive and space-constrained applications.

Key Features:

  • Device Type: P-Channel MOSFET
  • Configuration: Single
  • Drain-Source Breakdown Voltage (V<sub>DS): -60V
  • Continuous Drain Current (I<sub>D): -130mA
  • R<sub>DS(on): 10 Ohms at V<sub>GS = -4.5V
  • Power Dissipation (P<sub>D): 200mW
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-323
  • RoHS Compliant: Yes

The BSS84W-7-F is tailored for low voltage, low current applications such as load switch, power management, and DC-DC converters. Its P-Channel design allows for a simple drive configuration and is particularly suited for applications where a negative voltage load needs to be controlled.

With its low threshold voltage, the BSS84W-7-F is easily controlled by logic-level voltages, making it compatible with modern microcontroller interfaces. This feature simplifies the design of power management systems in portable and battery-operated devices, where power efficiency is of paramount importance.

Furthermore, the BSS84W-7-F offers a robust thermal performance due to its power dissipation capabilities, which ensure reliability and longevity even under challenging conditions. The MOSFET's high drain-source breakdown voltage provides a good safety margin for applications that may experience voltage spikes or fluctuations.

Encased in a small SOT-323 package, the BSS84W-7-F is not only space-efficient but also ensures minimal lead inductance, which is critical for fast-switching applications. Its lead-free and RoHS-compliant design reflects Diodes Incorporated's commitment to environmental sustainability, without compromising on quality and performance.

In summary, the BSS84W-7-F from Diodes Incorporated is a versatile and reliable component that meets the demands of modern electronic circuits, offering designers a high-quality solution for their power control needs.

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