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DDTC114ECAQ-7-F

Part No DDTC114ECAQ-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single, Pre - Biased
Description PREBIAS TRANSISTOR SOT23 T&R 3K / Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount SOT-23-3
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250 MHz
Power - Max 200 mW
Mounting SMD (SMT)
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3
ECCN EAR99
HTSUS 8541.21.0075
Other Names 31-DDTC114ECAQ-7-FTR
Standard Package 3,000
Win Source Part Number 1055278-DDTC114ECAQ-7-F
Ultra Librarian 3D Model Ultra Librarian DDTC114ECAQ-7-F CAD Model

Description

The DDTC114ECAQ-7-F is a high-quality bipolar transistor from Diodes Incorporated, renowned for its precision and durability. This product belongs to the pre-biased (digital) transistor family, which incorporates a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These components are designed to simplify circuit design and reduce component count in digital and switching applications.

Key Features

  • Transistor Type: This product is an NPN pre-biased transistor, which offers efficient operation and is commonly used for amplifying or switching electronic signals.
  • Configuration: The single configuration of the DDTC114ECAQ-7-F makes it ideal for compact designs, providing a streamlined solution for various electronic applications.
  • Resistor Ratio, R1/R2: The built-in resistor ratio ensures the transistor operates at optimal performance, reducing design complexity and saving space on the PCB.
  • Power Dissipation: With a power dissipation of 150mW, this transistor can handle a moderate amount of power, making it suitable for a wide range of electronic circuits.
  • DC Current Gain (hFE): The high current gain allows for efficient current amplification, providing reliable performance in digital and switching applications.
  • Mounting Type: Designed for surface mount technology, the DDTC114ECAQ-7-F comes in an SOT-23 package, which is widely used and easy to integrate into various electronic devices.
  • Operating Temperature: The device can operate within a temperature range of -55°C to +150°C, ensuring stability and reliability across diverse environmental conditions.
  • RoHS Compliant: Compliance with the Restriction of Hazardous Substances (RoHS) directive makes this transistor environmentally friendly and suitable for use in markets with strict RoHS requirements.

Applications

The DDTC114ECAQ-7-F is versatile and can be used in a multitude of applications, including but not limited to:

  • Signal processing
  • Power management
  • Logic level shifting
  • Switching loads
  • Driver circuits
  • Voltage regulation modules

With its robust design and efficient operation, the DDTC114ECAQ-7-F from Diodes Incorporated is a reliable choice for designers looking to enhance their electronic projects with a high-performance, pre-biased transistor.

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