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DMG1013TQ-7

Part No DMG1013TQ-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 460MA SOT523  /  P-Channel 20 V 460mA (Ta) 270mW (Ta) Surface Mount SOT-523
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 460mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 700mOhm @ 350mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.58 nC @ 4.5 V
Vgs (Max) ±6V
Input Capacitance (Ciss) (Max) @ Vds 59.76 pF @ 16 V
Power Dissipation (Max) 270mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SOT-523
Package / Case SOT-523
Base Product Number DMG1013
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Standard Package 3,000
Win Source Part Number 1193734-DMG1013TQ-7
Ultra Librarian 3D Model Ultra Librarian DMG1013TQ-7 CAD Model

Description

DMG1013TQ-7 - A High-Performance P-Channel MOSFET from Diodes Incorporated

The DMG1013TQ-7 is a cutting-edge P-Channel enhancement mode MOSFET brought to the electronics market by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This device is designed to offer efficient power management and control in a compact package, making it suitable for a wide range of applications.

With its SOT-523 package, the DMG1013TQ-7 is an ideal choice for space-constrained applications, offering a perfect blend of small form factor and high performance. It boasts a drain-source voltage (V<sub>DS) of -20V and a continuous drain current (I<sub>D) of -230mA, which allows for efficient operation in various circuit configurations.

The MOSFET features a low on-resistance (R<sub>DS(on)) of 3.5Ω at V<sub>GS = -4.5V, which translates to reduced power loss and improved efficiency in switching applications. This low R<sub>DS(on) also makes the DMG1013TQ-7 an excellent choice for load switch and battery management solutions, where power conservation is crucial.

One of the key advantages of the DMG1013TQ-7 is its robustness. The device is characterized by its high power and current handling capabilities, ensuring reliable performance even under stressful conditions. It is also designed with protection features such as ESD protection, which safeguards the device from electrostatic discharge events, enhancing its durability and lifespan.

The DMG1013TQ-7 is lead-free, halogen-free, and RoHS compliant, reflecting Diodes Incorporated's commitment to environmental sustainability. This compliance ensures that the product is suitable for use in environmentally sensitive applications and helps manufacturers meet international environmental standards.

In summary, the DMG1013TQ-7 from Diodes Incorporated is a high-performance P-Channel MOSFET that offers a compact footprint, low on-resistance, high efficiency, and robust protection features. Its versatility makes it an excellent choice for designers looking to optimize power management in portable electronics, power supply circuits, and a variety of other applications where space and efficiency are key considerations.

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Pricing & Ordering

Quantity Unit Price Ext. Price
815+ $0.0690 $56.2350
1,980+ $0.0567 $112.2660
3,065+ $0.0549 $168.2685
4,220+ $0.0531 $224.0820
5,460+ $0.0513 $280.0980
7,300+ $0.0460 $335.8000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,010 pieces
MOQ: 815 pcs
Order Increment : 1 pcs
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