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DMG1016VQ-13

Part No DMG1016VQ-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain Source Voltage 20V
Current - Continuous Drain (Id) @ 25°C 870mA, 640mA
Rds On (Maximum) @ Id, Vgs 400 mOhm @ 600mA, 4.5V
Vgs(th) (Maximum) @ Id 1V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 0.74nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds 60.67pF @ 16V
Power - Max 530mW
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package SOT-563, SOT-666
Manufacturer Package SOT-563
Win Source Part Number 1168056-DMG1016VQ-13
Manufacturer Homepage www.diodes.com
Popularity Medium
Supply and Demand Status Limited
Family Name DMG1016VQ
Introduction Date September 09, 2015
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Unknown
Ultra Librarian 3D Model Ultra Librarian DMG1016VQ-13 CAD Model

Description

DMG1016VQ-13 Dual N-Channel Enhancement Mode Field Effect Transistor

The DMG1016VQ-13 is a high-performance, dual N-Channel enhancement mode field effect transistor (FET) designed and manufactured by Diodes Incorporated. This field-effect transistor is an essential component for modern electronics, offering low on-resistance and a compact form factor. It is particularly suitable for applications requiring efficient power management and high-speed switching.

With its advanced MOSFET technology, the DMG1016VQ-13 provides excellent thermal performance and high reliability. The device is housed in a small TSOT-26 package, which makes it an ideal choice for space-constrained applications. The dual N-Channel configuration allows for the reduction of component count in designs, providing a more streamlined circuit with improved power density.

Key Features:

  • Low On-Resistance: The DMG1016VQ-13 offers an exceptionally low on-resistance, resulting in reduced power loss and improved efficiency in electronic circuits.
  • High-Speed Switching: Designed for fast switching applications, this transistor provides the speed needed for efficient operation in high-frequency circuits.
  • Dual N-Channel Configuration: The dual N-Channel MOSFET allows for compact designs by integrating two transistors in a single package.
  • Small Package Size: The TSOT-26 package is optimized for minimal footprint, which is crucial for portable and space-sensitive applications.
  • Lead-Free and RoHS Compliant: The DMG1016VQ-13 meets environmental standards, being lead-free and compliant with the Restriction of Hazardous Substances (RoHS) directive.

Applications:

The versatility of the DMG1016VQ-13 makes it suitable for a wide range of applications, including:

  • Power Management Circuits
  • Load/Power Switching
  • Battery Protection
  • DC-DC Converters
  • Portable Devices
  • Motor Control Systems

With its combination of performance, efficiency, and compact size, the DMG1016VQ-13 from Diodes Incorporated is a reliable choice for engineers looking to optimize their electronic designs. Whether for consumer electronics, industrial systems, or automotive applications, this dual N-Channel MOSFET stands out as a component that can drive innovation and performance in a multitude of electronic projects.

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