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DMG1029SVQ-7

Part No DMG1029SVQ-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET BVDSS: 41V~60V SOT563 T&R / Mosfet Array N and P-Channel Complementary 60V 500mA (Ta), 360mA (Ta) 450mW (Ta) Surface Mount SOT-563
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Manufacturer Diodes Incorporated
Packaging Reel - TR
FET Type N and P-Channel Complementary
FET Feature Standard
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 500mA, 360mA
Rds On (Max) @ Id, Vgs 1.7Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA, 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.3nC @ 4.5V, 0.28nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 30pF @ 25V, 25pF @ 25V
Power - Max 450mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Surface Mount
Case / Package SOT-563, SOT-666
Supplier Device Package SOT-563
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 31-DMG1029SVQ-7TR
Standard Package 3,000
Win Source Part Number 1324424-DMG1029SVQ-7
Ultra Librarian 3D Model Ultra Librarian DMG1029SVQ-7 CAD Model

Description

Product Overview: DMG1029SVQ-7

The DMG1029SVQ-7 is a high-performance, P-Channel enhancement mode field effect transistor (FET) designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This product is specifically engineered to offer efficient power management and control within electronic circuits, making it an ideal component for a wide range of applications.

Key Features

  • Low On-Resistance: The DMG1029SVQ-7 boasts a very low on-resistance, which translates to reduced power loss and improved efficiency when the transistor is in the conducting state.
  • High-Speed Switching: Designed for fast switching applications, this FET can operate at high frequencies, enabling efficient performance in power conversion and regulation tasks.
  • Small Form Factor: Enclosed in a compact SOT-563 package, the DMG1029SVQ-7 is suitable for space-constrained applications, allowing for high-density circuit designs.
  • Low Threshold Voltage: With a low gate threshold voltage, this device can be easily driven at lower voltages, making it compatible with low-voltage logic levels and suitable for battery-operated devices.
  • Lead-Free and RoHS Compliant: In alignment with environmental standards, the DMG1029SVQ-7 is lead-free and complies with the Restriction of Hazardous Substances (RoHS) directive, ensuring minimal environmental impact.

Applications

The versatility of the DMG1029SVQ-7 allows it to be integrated into a diverse array of electronic systems. Typical applications include:

  • Power management modules
  • Load switches
  • Battery management systems
  • DC-DC converters
  • Portable electronic devices

Technical Specifications

The DMG1029SVQ-7 operates within a drain-source voltage (Vds) of -20V, and a continuous drain current (Id) of -540mA at a temperature of 25°C. The device's power dissipation is rated at 150mW, and it features a maximum junction temperature of 150°C, ensuring stable operation under a range of thermal conditions.

Conclusion

Overall, the DMG1029SVQ-7 from Diodes Incorporated represents a reliable and efficient solution for designers seeking a P-Channel MOSFET with low on-resistance, high-speed switching capabilities, and a compact footprint. Its compliance with environmental standards further makes it a conscientious choice for modern electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
400+ $0.1250 $50.0000
855+ $0.1171 $100.1205
1,330+ $0.1132 $150.5560
1,900+ $0.1053 $200.0700
2,470+ $0.1013 $250.2110
3,085+ $0.0973 $300.1705
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,500 pieces
MOQ: 400 pcs
Order Increment : 1 pcs
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