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DMG2301L-7

Part No DMG2301L-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 3A SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 5.5nC @ 4.5V
Max Input Capacitance 476pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 120 mOhm @ 2.8A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1033664-DMG2301L-7
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial
Ultra Librarian 3D Model Ultra Librarian DMG2301L-7 CAD Model

Description

DMG2301L-7 P-Channel MOSFET by Diodes Incorporated

The DMG2301L-7 is a high-performance P-Channel enhancement mode MOSFET designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality semiconductor products. This MOSFET is a testament to Diodes Incorporated's commitment to providing energy-efficient and miniaturized solutions for a wide range of electronic applications.

Featuring a compact SOT-23 package, the DMG2301L-7 is optimized for space-sensitive applications while offering robust electrical characteristics that make it suitable for high-efficiency power management tasks. With a -20V drain-source breakdown voltage (VDS) and a -3.7A continuous drain current (ID), this MOSFET is capable of handling moderate power levels in a variety of circuits.

One of the key advantages of the DMG2301L-7 is its low on-resistance (RDS(on)), which is typically just 65mΩ at VGS = -4.5V. This feature ensures minimal conduction losses and improves overall efficiency, making it an ideal choice for applications such as load switches, battery management, and power conversion in portable devices.

The device also includes built-in gate protection to safeguard against electrostatic discharge (ESD) events, enhancing its reliability and longevity in consumer electronics, where ESD can be a common issue. Additionally, the DMG2301L-7 is characterized by fast switching speeds, which are crucial for reducing switching losses in PWM applications and for improving performance in high-frequency circuits.

Diodes Incorporated has engineered the DMG2301L-7 to be RoHS compliant, reflecting the company's dedication to environmental responsibility by avoiding the use of hazardous substances in its products. This commitment ensures that the DMG2301L-7 meets the requirements of environmentally conscious manufacturers and consumers alike.

In summary, the DMG2301L-7 P-Channel MOSFET is a versatile and efficient solution for a plethora of electronic applications. Its combination of low on-resistance, high-speed switching, and compact packaging makes it an excellent choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
880+ $0.0571 $50.2480
1,870+ $0.0535 $100.0450
2,905+ $0.0517 $150.1885
4,160+ $0.0481 $200.0960
5,400+ $0.0463 $250.0200
6,745+ $0.0445 $300.1525
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 109,260 pieces
MOQ: 880 pcs
Order Increment : 1 pcs
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