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DMG3415UFY4Q-7

Name: DMG3415UFY4Q-7
Brand: Diodes Incorporated
SKU: 1055748
Availability: InStock
Rating: 5 (535 reviews)

Part No	DMG3415UFY4Q-7
Manufacturer	Diodes Incorporated
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET P-CH 16V 2.5A X2-DFN2015 / P-Channel 16 V 2.5A (Ta) 650mW (Ta) Surface Mount X2-DFN2015-3
Datasheet	DMG3415UFY4Q-7 Datasheet
Sample
ECAD Module

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Shipping Information

Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
Supplier Lead-Time	Call for availability
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Pricing & Ordering $0.212

Quantity

Unit Price

Ext. Price

200+

$0.2550

$51.000

480+

$0.2090

$100.320

740+

$0.2030

$150.220

1,025+

$0.1960

$200.900

1,320+

$0.1900

$250.800

1,765+

$0.1700

$300.050

* The above prices does not include taxes and freight rates, which will be calculated on the order pages.

Availability: 29,000 pieces

MOQ: 200 pcs

Order Increment : 1 pcs

Qty:

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Products specifications

HTSUS	8541.21.0095
Other Names	DMG3415UFY4Q-7DIDKR,DMG3415UFY4Q-7DICT,DMG3415UFY4Q-7DITR
Standard Package	3,000
Win Source Part Number	1055748-DMG3415UFY4Q-7
Fake Threat In the Open Market	80 pct.
Alternative Parts (Cross-Reference)	DMC2038LVT-7; FDN339AN; IRLML2246TRPBF; DMP2170U-7; DMP1096UCB4-7; NTGD3148NT1GDMG3415UFY4Q7;
ECCN	EAR99
REACH Status	REACH Unaffected
MSL Level	1 (Unlimited)
Base Product Number	DMG3415
Package / Case	3-XDFN
Supplier Device Package	X2-DFN2015-3
Mounting	SMD (SMT)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	650mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds	282 pF @ 10 V
Vgs (Max)	±8V
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 4.5 V
Vgs(th) (Max) @ Id	1V @ 250µA
Rds On (Max) @ Id, Vgs	39mOhm @ 4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C	2.5A (Ta)
Drain to Source Voltage (Vdss)	16 V
Technology	MOSFET (Metal Oxide)
FET Type	P-Channel
Package	Tape & Reel
Mfr	Diodes Incorporated
Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single

Description

DMG3415UFY4Q-7 - Diodes Incorporated

The DMG3415UFY4Q-7 is a high-performance, P-Channel enhancement mode Field Effect Transistor (FET) designed and manufactured by Diodes Incorporated. This device is specifically engineered to cater to a wide range of power management applications, making it an ideal component for modern electronic systems that demand energy efficiency and reliability.

Key Features

Low On-Resistance: The DMG3415UFY4Q-7 boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in power circuits.
High Power Dissipation: With its robust design, this FET can dissipate high levels of power, ensuring stable performance even under demanding conditions.
Small Footprint: The device comes in a compact X2-DFN2020-6 package, making it suitable for space-constrained applications without compromising on power handling capabilities.
Lead-Free and RoHS Compliant: Adhering to environmental standards, the DMG3415UFY4Q-7 is lead-free and meets the Restriction of Hazardous Substances (RoHS) directive, making it a responsible choice for eco-friendly electronics.

Applications

The versatility of the DMG3415UFY4Q-7 allows it to be integrated into a variety of applications, including:

Power Management Circuits
Load Switches
Battery Management Systems
DC-DC Converters
Portable Electronic Devices

Technical Specifications

Parameter	Value
Drain-Source Voltage (V_DS)	-20V
Gate-Source Voltage (V_GS)	±8V
Continuous Drain Current (I_D)	-6.5A
Power Dissipation (P_D)	1.25W
Operating Temperature Range	-55°C to +150°C

Overall, the DMG3415UFY4Q-7 from Diodes Incorporated represents a blend of performance, efficiency, and compactness, making it a top choice for designers looking to optimize their power management solutions.