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DMG4496SSS-13

Part No DMG4496SSS-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 10A 8SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 10.2nC @ 10V
Max Input Capacitance 493.5pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 1.42W (Ta)
Maximum Rds On at Id,Vgs 21.5 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 014387-DMG4496SSS-13
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMG4496SSS-13 CAD Model

Description

Introducing the DMG4496SSS-13 MOSFET from Diodes Incorporated

The DMG4496SSS-13 is a state-of-the-art, high-performance MOSFET designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This product is engineered to meet the increasing demands of power efficiency and reliability in a wide range of applications, including power management, consumer electronics, and industrial systems.

Key Features:

  • Device Type: This product is a P-Channel MOSFET, which is ideal for low-voltage applications that require efficient power conversion and switching.
  • Drain-Source Voltage (VDS): The DMG4496SSS-13 has a maximum drain-source voltage of -30V, providing a robust platform for various electronic circuits.
  • Continuous Drain Current (ID): It supports a high continuous drain current of -8.6A at 25°C, ensuring high current handling capability.
  • RDS(on): The device boasts a low on-resistance of 20mΩ at VGS = -10V, leading to reduced power losses and improved efficiency.
  • Package: Housed in a space-saving SOP-8 package, the DMG4496SSS-13 is designed for compact PCB layouts and is suitable for surface mount technology (SMT).
  • Temperature Range: With an operating junction temperature range from -55°C to +150°C, it can withstand extreme environmental conditions, ensuring reliability and longevity.

Applications:

The versatility of the DMG4496SSS-13 MOSFET makes it an excellent choice for a variety of applications, including:

  • Power supply circuits
  • DC/DC converters
  • Motor drives
  • Battery management systems
  • Load switches
  • Portable devices

The DMG4496SSS-13 from Diodes Incorporated represents a perfect blend of performance, efficiency, and reliability. Its robust design and electrical characteristics make it a preferred choice for designers who require a high-quality P-Channel MOSFET for their electronic solutions. Whether you're developing power management systems or integrating MOSFETs into consumer electronics, the DMG4496SSS-13 is engineered to deliver optimal performance and exceed expectations.

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.2911 $50.9425
420+ $0.2389 $100.3380
650+ $0.2314 $150.4100
895+ $0.2239 $200.3905
1,155+ $0.2165 $250.0575
1,550+ $0.1941 $300.8550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,500 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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