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DMG6402LDM-7

Part No DMG6402LDM-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 5.3A SOT26
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 9.2nC @ 10V
Max Input Capacitance 404pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.12W (Ta)
Maximum Rds On at Id,Vgs 27 mOhm @ 7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-26
Dimension SOT-23-6
Win Source Part Number 014391-DMG6402LDM-7
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMG6402LDM-7 CAD Model

Description

DMG6402LDM-7 - P-Channel MOSFET by Diodes Incorporated

The DMG6402LDM-7 is a high-performance P-Channel enhancement mode MOSFET from Diodes Incorporated, designed for power management applications. This MOSFET is part of the company's extensive range of semiconductor products and offers a compact, efficient solution for switching and amplification needs.

With its low on-resistance and high threshold voltage, the DMG6402LDM-7 is optimized for low voltage applications that require efficient power control. It is housed in a small form factor package, the DFN2020-6 (dual), which provides excellent power dissipation and space-saving advantages on printed circuit boards (PCBs).

Key Features:

  • Low On-Resistance: The device features a low on-resistance of just 50 mOhms at VGS = -4.5V, which translates to reduced power losses and improved efficiency in operation.
  • High Power Dissipation: Capable of dissipating up to 2.5W of power, the DMG6402LDM-7 can handle significant power levels, making it suitable for robust applications.
  • High Threshold Voltage: With a threshold voltage of -0.45V to -1V, this MOSFET ensures reliable operation even at low gate voltages, providing designers with flexibility in circuit design.
  • Advanced Packaging: The DFN2020-6 (dual) package is designed for enhanced thermal performance and occupies less PCB space, which is crucial for modern compact electronic designs.
  • RoHS Compliant: The product meets RoHS standards, ensuring compliance with environmental regulations and promoting sustainability.

Applications:

The DMG6402LDM-7 is ideal for a variety of applications, particularly where power efficiency and space constraints are critical. Common applications include:

  • Load switches
  • Battery management systems
  • Power distribution circuits
  • DC/DC converters
  • Portable devices

With its combination of performance, efficiency, and compact packaging, the DMG6402LDM-7 from Diodes Incorporated is a versatile component that can enhance the power management capabilities of a wide range of electronic products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
455+ $0.1273 $57.9215
1,105+ $0.1046 $115.5830
1,715+ $0.1012 $173.5580
2,360+ $0.0979 $231.0440
3,050+ $0.0947 $288.8350
4,085+ $0.0849 $346.8165
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 455 pcs
Order Increment : 1 pcs
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