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DMG7401SFG-13

Part No DMG7401SFG-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH 30V 9.8A 8-Pin PowerDI EP T/R / MOSFET P-CH 30V POWERDI3333-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 20V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 58nC @ 10V
Max Input Capacitance 2987pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 940mW (Ta)
Maximum Rds On at Id,Vgs 11 mOhm @ 12A, 20V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerDI3333-8
Dimension 8-PowerWDFN
Win Source Part Number 1033689-DMG7401SFG-13
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name DMG7401SFG
Introduction Date March 29, 2012
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian DMG7401SFG-13 CAD Model

Description

DMG7401SFG-13 - Diodes Incorporated

The DMG7401SFG-13 is a high-performance, P-Channel enhancement mode MOSFET from Diodes Incorporated, designed for power management applications. This semiconductor device is known for its efficiency and reliability, making it an ideal choice for a wide range of electronic circuits. It is commonly used in load switch, power management, and other applications that require a high-efficiency P-Channel MOSFET.

Key Features:

  • Low On-Resistance: The DMG7401SFG-13 offers very low on-resistance (R<sub>DS(on)), which minimizes power loss and improves overall efficiency in circuits where it is deployed.
  • High Power Dissipation: With a power dissipation of 2.5W, this MOSFET can handle significant amounts of power, making it suitable for high-power applications.
  • High Continuous Drain Current: It supports a continuous drain current (I<sub>D) of -8.5A, which allows for robust performance in applications that demand high current.
  • Advanced Packaging: The DMG7401SFG-13 comes in a small form factor SO-8 package, which ensures a compact footprint while still providing excellent thermal performance.
  • Gate Charge: This device has been optimized for low gate charge (Q<sub>G), which reduces switching losses and enhances the speed of operation.
  • Threshold Voltage: It has a threshold voltage (V<sub>GS(th)) that ensures a low gate drive requirement, making it compatible with a broader range of drive circuits.

Applications:

The DMG7401SFG-13 is versatile and can be used in various applications, including:

  • Power Management Systems
  • DC/DC Converters
  • Battery Management Systems
  • Load Switching
  • Portable Devices
  • Motor Control Circuits

Quality and Reliability:

Diodes Incorporated is committed to providing high-quality products. The DMG7401SFG-13 is built to meet stringent quality standards, ensuring reliability and performance in even the most demanding applications. Whether for consumer electronics or industrial systems, this MOSFET stands as a testament to Diodes Incorporated's dedication to excellence in semiconductor manufacturing.

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.4749 $52.2390
260+ $0.3897 $101.3220
400+ $0.3775 $151.0000
550+ $0.3654 $200.9700
710+ $0.3532 $250.7720
950+ $0.3166 $300.7700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 29,419 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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