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DMG7408SFG-7

Part No DMG7408SFG-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 7A POWERDI
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.4V @ 250μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 478.9pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 23 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerDI3333-8
Dimension 8-PowerWDFN
Win Source Part Number 1033692-DMG7408SFG-7
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMG7408SFG-7 CAD Model

Description

DMG7408SFG-7 P-Channel Enhancement Mode MOSFET by Diodes Incorporated

The DMG7408SFG-7 is a high-performance P-Channel enhancement mode MOSFET designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This MOSFET is part of Diodes Incorporated's extensive range of power management devices, catering to a wide array of applications that demand high efficiency and reliability.

Constructed with advanced trench MOSFET technology, the DMG7408SFG-7 offers excellent on-resistance (R<sub>DS(on)) and low threshold voltage, ensuring minimal conduction losses and making it an ideal choice for power switching applications. The device is housed in a compact SOT-363 package, which is highly suited for space-constrained applications while providing good thermal performance.

Key Features:

  • Low On-Resistance: The DMG7408SFG-7 boasts a low R<sub>DS(on) value, which translates to reduced power dissipation and improved overall efficiency in circuits where it is deployed.
  • High Power Dissipation: With a power dissipation rating of 1.4W, this MOSFET can handle a significant amount of power, making it suitable for high-power applications.
  • P-Channel Device: As a P-Channel MOSFET, it is commonly used for load switching in systems that require a negative load voltage, and it simplifies the drive circuitry in certain configurations.
  • Threshold Voltage: The device operates at a low threshold voltage, ensuring that it can be controlled with lower gate drive voltages, which is beneficial for battery-operated devices and low-voltage circuits.
  • RoHS Compliant: The DMG7408SFG-7 meets RoHS standards, ensuring that it is free from hazardous substances and is environmentally friendly.

Applications:

The versatility of the DMG7408SFG-7 allows it to be used in a variety of applications, including:

  • Power Management Circuits
  • Battery-Powered Systems
  • Load Switching
  • Portable Devices
  • DC/DC Converters

With its robust performance characteristics and compact form factor, the DMG7408SFG-7 from Diodes Incorporated stands out as a superior choice for designers looking to optimize their power management solutions. Its integration into your electronic designs promises to deliver efficiency, reliability, and high-quality performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5842 $52.5780
210+ $0.4793 $100.6530
325+ $0.4644 $150.9300
450+ $0.4494 $202.2300
580+ $0.4344 $251.9520
775+ $0.3895 $301.8625
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 39,280 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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