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DMG8822UTS-13

Part No DMG8822UTS-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 4.9A 8TSSOP / Trans MOSFET N-CH 20V 4.9A 8-Pin TSSOP T/R
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.9A
Maximum Rds On at Id,Vgs 25 mOhm @ 8.2A, 4.5V
Gate-Source Threshold Voltage 900mV @ 250μA
Max Gate Charge 9.6nC @ 4.5V
Max Input Capacitance 841pF @ 10V
Maximum Power Dissipation 870mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Win Source Part Number 116754-DMG8822UTS-13
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name DMG8822UTS
Introduction Date June 08, 2009
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian DMG8822UTS-13 CAD Model

Description

Introducing the DMG8822UTS-13 Dual N-Channel Enhancement Mode MOSFET

The DMG8822UTS-13 is a high-performance, dual N-Channel enhancement mode Field Effect Transistor (FET) designed and manufactured by Diodes Incorporated. This MOSFET is engineered to deliver efficient power control and switching in a compact, surface-mount package. It is an ideal choice for a variety of applications, including power management, load switching, and motor control in consumer electronics, industrial systems, and automotive circuits.

Key Features and Benefits

  • Low On-Resistance: The DMG8822UTS-13 offers exceptionally low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
  • High-Speed Switching: With its fast switching characteristics, this MOSFET is well-suited for high-frequency applications, ensuring minimal energy is wasted during the transition periods of switching events.
  • Dual N-Channel Configuration: The integration of two N-Channel MOSFETs in a single package allows for compact designs and simplified PCB layout, saving space and reducing component count.
  • Thermal Management: The DMG8822UTS-13 is encapsulated in a RoHS-compliant U-DFN2020-6 (Type C) package, which offers excellent thermal performance and ensures reliability even under high operating temperatures.
  • High Power and Current Handling: This device is capable of supporting a continuous drain current (I<sub>D), providing ample headroom for a wide range of power applications.
  • Gate Charge Optimization: The optimized gate charge (Q<sub>G) minimizes the power required to switch the device, further enhancing its efficiency.

Applications

The versatility of the DMG8822UTS-13 makes it suitable for a broad spectrum of applications. It is particularly useful in:

  • Power supply circuits
  • DC-DC converters
  • Battery management systems
  • Load switches
  • Motor control units
  • Automotive electronics

With its combination of high efficiency, fast switching, dual-channel integration, and robust thermal performance, the DMG8822UTS-13 from Diodes Incorporated stands out as a superior choice for designers looking to optimize their power management solutions. Its compact form factor and high reliability make it a go-to component for modern electronic systems where performance and space savings are paramount.

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Pricing & Ordering

Quantity Unit Price Ext. Price
230+ $0.2220 $51.0600
550+ $0.1822 $100.2100
850+ $0.1765 $150.0250
1,175+ $0.1708 $200.6900
1,515+ $0.1651 $250.1265
2,030+ $0.1480 $300.4400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 230 pcs
Order Increment : 1 pcs
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