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DMN10H099SFG-13

Part No DMN10H099SFG-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 4.2A PWRDI3333
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 51 Weeks
Features N-Channel 100 V 4.2A (Ta) 980mW (Ta) Surface Mount PowerDI3333-8
Manufacturer Diodes Incorporated
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 8-PowerVDFN
Case / Package PowerDI3333-8
Family Name DMN10
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Quantity per package 3000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 868926-DMN10H099SFG-13
Ultra Librarian 3D Model Ultra Librarian DMN10H099SFG-13 CAD Model

Description

Product Overview: DMN10H099SFG-13 from Diodes Incorporated

The DMN10H099SFG-13 is a high-performance, N-channel enhancement mode Field Effect Transistor (FET) designed by Diodes Incorporated, a leading manufacturer in the semiconductor market. This MOSFET is engineered to provide efficient power conversion and switching with low on-resistance and fast switching speeds. It is housed in a compact, surface-mount package, making it suitable for a wide range of applications, including power management, load switching, and motor control in consumer, industrial, and automotive markets.

Key Features

  • Low On-Resistance: The DMN10H099SFG-13 boasts a low on-resistance (R<sub>DS(on)), which means it has a minimal voltage drop across the device when conducting. This characteristic ensures efficient power usage and reduced heat generation.
  • High-Speed Switching: Designed for fast switching applications, this MOSFET can operate at high frequencies without sacrificing performance, making it ideal for power converters and pulse circuits.
  • Power Dissipation: With an impressive power dissipation capability, the DMN10H099SFG-13 can handle significant power levels, contributing to the reliability and longevity of the application.
  • Surface-Mount Package: The device comes in a space-saving surface-mount package, which is perfect for modern compact electronic assemblies.

Applications

  • DC/DC Converters
  • Power Management Systems
  • Load Switching
  • Motor Control Circuits
  • Automotive Electronics
  • Portable Devices

Technical Specifications

The DMN10H099SFG-13 operates with a continuous drain current of up to 7.5A and can handle pulse currents significantly higher. Its threshold voltage is optimized for low voltage drive, making it suitable for battery-operated devices. The device can withstand a maximum drain-source voltage (V<sub>DSS) of 100V, which allows it to be used in high voltage applications safely.

Diodes Incorporated has designed the DMN10H099SFG-13 with the highest standards, ensuring that it meets the rigorous requirements of various electronic designs. Its performance, efficiency, and reliability make it a valuable component for designers looking to optimize their power management and switching applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.3352 $58.6600
420+ $0.2751 $115.5420
655+ $0.2665 $174.5575
900+ $0.2580 $232.2000
1,160+ $0.2492 $289.0720
1,555+ $0.2235 $347.5425
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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