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DMN10H099SK3-13

Part No DMN10H099SK3-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 17A TO252
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 25.2nC @ 10V
Max Input Capacitance 1172pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 34W (Tc)
Maximum Rds On at Id,Vgs 80 mOhm @ 3.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1033708-DMN10H099SK3-13
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMN10H099SK3-13 CAD Model

Description

The DMN10H099SK3-13 is a high-performance, N-channel enhancement mode field effect transistor (FET) designed and manufactured by Diodes Incorporated. This MOSFET is designed to offer efficient power management and is suitable for a wide range of applications, including power supplies, motor controls, and high-speed switching circuits.

Key Features

  • Low On-Resistance: The DMN10H099SK3-13 boasts an extremely low on-resistance, which translates to reduced power loss and improved efficiency in applications where it is deployed.
  • High-Speed Switching: With its fast switching characteristics, this MOSFET is ideal for applications that require rapid transitions, such as power converters and inverters.
  • Power Dissipation: It has a maximum power dissipation of 2.5W, ensuring that it can handle significant power levels without overheating.
  • High Threshold Voltage: The device features a threshold voltage that provides a robust gate signal level, reducing the likelihood of accidental turn-on due to noise.
  • Surface-Mount Package: The DMN10H099SK3-13 comes in a compact DFN2020-6 (Type B) surface-mount package, which saves space on the PCB and is suitable for automated assembly processes.

Applications

The versatility of the DMN10H099SK3-13 allows it to be used in a variety of applications. Some of the common applications include:

  • DC-DC Converters
  • Power Management Circuits
  • Battery Powered Devices
  • Load/Power Switching
  • Motor Control Systems

Quality and Reliability

Diodes Incorporated is known for its commitment to quality, and the DMN10H099SK3-13 is no exception. It is produced using high-quality materials and state-of-the-art manufacturing processes, ensuring both reliability and performance. The device is RoHS compliant, reflecting Diodes Incorporated's dedication to environmental responsibility.

Technical Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 100V Continuous Drain Current (I<sub>D) 760mA On-Resistance (R<sub>DS(on)) 0.69Ω Power Dissipation (P<sub>D) 2.5W Operating Temperature Range -55°C to +150°C

For detailed product specifications, application notes, and additional resources, customers are encouraged to visit the Diodes Incorporated website or contact their local sales representative.

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.4128 $57.7920
345+ $0.3388 $116.8860
530+ $0.3282 $173.9460
730+ $0.3176 $231.8480
945+ $0.3070 $290.1150
1,260+ $0.2753 $346.8780
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,500 pieces
MOQ: 140 pcs
Order Increment : 1 pcs
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