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DMN10H220LE-13

Part No DMN10H220LE-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 2.3A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 8.3nC @ 10V
Max Input Capacitance 401pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 220 mOhm @ 1.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 1033715-DMN10H220LE-13
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMN10H220LE-13 CAD Model

Description

Product Overview: DMN10H220LE-13

The DMN10H220LE-13 is a high-performance, dual N-channel enhancement mode field effect transistor (FET) designed by the renowned manufacturer, Diodes Incorporated. This MOSFET is engineered to deliver efficient power control and is suitable for a wide range of applications, including power management, load switching, and DC-DC conversion in modern electronic devices.

Key Features

  • Low On-Resistance: The device features a low on-resistance (R<sub>DS(on)) which minimizes conduction losses, providing more efficient power usage and improving overall device performance.
  • High-Speed Switching: With its fast switching capabilities, the DMN10H220LE-13 is ideal for high-frequency applications, ensuring minimal power loss during the switching process.
  • Dual N-Channel Configuration: The dual N-channel setup allows for compact circuit design, saving space and reducing component count in applications where multiple FETs are required.
  • PowerDI3333-8 Package: The device comes in a compact PowerDI3333-8 package, which provides excellent thermal performance and is suitable for space-constrained applications.
  • Lead-Free and RoHS Compliant: This product is environmentally friendly, meeting the requirements of the RoHS directive, which restricts the use of certain hazardous substances in electrical and electronic equipment.

Applications

  • Power Management Systems
  • Load Switching Circuits
  • DC-DC Converters
  • Battery Management
  • Computer Peripherals
  • Portable Electronic Devices

The DMN10H220LE-13 is a testament to Diodes Incorporated's commitment to providing innovative semiconductor solutions. Its robust design and energy-efficient operation make it an excellent choice for designers looking to optimize their power management systems. Whether it's for consumer electronics, industrial applications, or portable devices, the DMN10H220LE-13 delivers reliable performance in a compact footprint.

For detailed specifications and application guidelines, engineers and designers should consult the comprehensive datasheet provided by Diodes Incorporated. This will ensure the optimal implementation of the DMN10H220LE-13 in their projects.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.9105 $52.3890
42+ $2.3881 $100.3002
65+ $2.3135 $150.3775
90+ $2.2389 $201.5010
116+ $2.1642 $251.0472
155+ $1.9403 $300.7465
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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