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DMN2011UFDE-7

Part No DMN2011UFDE-7
Manufacturer Diodes Incorporated
Catalog FETs - Single
Description MOSFET N-CH 20V 11.7A UDFN2020-6 / 20V N-CHANNEL ENHANCEMENT MODE MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Diodes Incorporated
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) at 25°C 11.7A
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Maximum) at Id, Vgs 9.5mOhm at 7A, 4.5V
Vgs(th) (Maximum) at Id 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 56nC at 10V
Maximum Vgs ±12V
Input Capacitance (Ciss) (Maximum) at Vds 2248pF at 10V
Power Dissipation (Maximum) 610mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package U-DFN2020-6 (Type E)
Manufacturer Package 6-UDFN Exposed Pad
Part Number Series DMN2011
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 811655-DMN2011UFDE-7
Ultra Librarian 3D Model Ultra Librarian DMN2011UFDE-7 CAD Model

Description

DMN2011UFDE-7 - N-Channel Enhancement Mode Field Effect Transistor

The DMN2011UFDE-7 is a high-performance, N-channel enhancement mode field effect transistor (FET) designed and manufactured by Diodes Incorporated. This FET is a part of their extensive MOSFET product line, offering designers a compact, low-resistance device for a variety of applications. The DMN2011UFDE-7 is particularly suitable for portable and battery-powered equipment, where efficient power management is crucial.

Key Features

  • Low On-Resistance: The DMN2011UFDE-7 features a low on-resistance of typically 20 mΩ at V<sub>GS = 4.5V, which helps to reduce conduction losses and improve overall efficiency.
  • High Continuous Drain Current: It offers a high continuous drain current of 7.5 A, allowing it to handle significant power without overheating.
  • High-Speed Switching: The transistor is optimized for fast switching, with a typical turn-on delay time of 3.8 ns and turn-off delay time of 13 ns, making it ideal for high-speed circuitry.
  • Low Threshold Voltage: The low threshold voltage of 0.8 V (typical) ensures that the device can be easily driven by low-voltage control signals, which is beneficial for low-voltage applications.
  • Advanced Packaging: The DMN2011UFDE-7 comes in an ultra-small XDFN2020-6 package, which minimizes the PCB footprint and is excellent for space-constrained applications.
  • RoHS Compliant: Complying with RoHS environmental directives, this product is lead-free and supports environmentally friendly manufacturing and recycling processes.

Applications

  • Power Management Circuits
  • DC-DC Converters
  • Battery Management Systems
  • Load Switches
  • Portable Electronic Devices
  • Motor Drives

The DMN2011UFDE-7 is built to deliver high performance and reliability, making it an excellent choice for engineers looking to optimize the power efficiency and size of their designs. With its robust electrical characteristics and compact packaging, the DMN2011UFDE-7 is a versatile component that can be utilized in a wide range of electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4566 $57.0750
300+ $0.3746 $112.3800
465+ $0.3630 $168.7950
640+ $0.3512 $224.7680
825+ $0.3396 $280.1700
1,105+ $0.3044 $336.3620
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 26,000 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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