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DMN2013UFDEQ-7

Part No DMN2013UFDEQ-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET BVDSS: 8V~24V U-DFN2020-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 10.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 11mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25.8 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 2453 pF @ 10 V
Power Dissipation (Max) 660mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package U-DFN2020-6 (Type E)
Package / Case 6-PowerUDFN
Base Product Number DMN2013
Standard Package 3,000 pcs
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 585430-DMN2013UFDEQ-7
Ultra Librarian 3D Model Ultra Librarian DMN2013UFDEQ-7 CAD Model

Description

Diodes Incorporated DMN2013UFDEQ-7 MOSFET

The DMN2013UFDEQ-7 from Diodes Incorporated is a high-performance, surface-mount, N-channel enhancement mode Field Effect Transistor (FET) that is designed to deliver efficient power control and switching functionalities in a wide array of electronic applications. This compact and versatile MOSFET is a part of Diodes Incorporated's extensive portfolio of semiconductor products, known for their reliability and cutting-edge technology.

Key Features

  • Low On-Resistance: The DMN2013UFDEQ-7 features a low on-resistance, which ensures minimal power loss during operation, making it an energy-efficient choice for power management tasks.
  • High-Speed Switching: This MOSFET is capable of high-speed switching, which is essential for applications requiring rapid response times, such as power supplies and motor controls.
  • Surface-Mount Package: The device comes in a compact DFN2020-6 (Type D) package, which is ideal for space-constrained applications and allows for efficient thermal management.
  • RoHS Compliant: In alignment with environmental standards, the DMN2013UFDEQ-7 is RoHS compliant, making it suitable for use in eco-friendly products.

Applications

The DMN2013UFDEQ-7 is designed to meet the requirements of a broad range of applications. It is particularly well-suited for:

  • Power management circuits
  • DC-DC converters
  • Battery powered devices
  • Load switches
  • Motor control systems

Technical Specifications

Some of the technical specifications of the DMN2013UFDEQ-7 include:

  • Drain-Source Voltage (V<sub>DS): 20V
  • Continuous Drain Current (I<sub>D): 6.5A
  • Power Dissipation (P<sub>D): 1.25W
  • Gate Threshold Voltage (V<sub>GS(th)): 1.0V
  • Operating Temperature Range: -55°C to +150°C

With its robust performance and flexible application range, the DMN2013UFDEQ-7 is an excellent choice for designers and engineers looking to integrate an efficient N-channel MOSFET into their electronic designs. The combination of its low on-resistance, high-speed switching, and compact footprint make it a highly attractive option for modern, high-performance circuits.

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Pricing & Ordering

Quantity Unit Price Ext. Price
150+ $0.3376 $50.6400
365+ $0.2771 $101.1415
560+ $0.2684 $150.3040
775+ $0.2597 $201.2675
1,000+ $0.2511 $251.1000
1,335+ $0.2251 $300.5085
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,000 pieces
MOQ: 150 pcs
Order Increment : 1 pcs
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