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DMN2022UNS-7

Part No DMN2022UNS-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2NCH 20V 10.7A POWERDI
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 10.7A
Maximum Rds On at Id,Vgs 10.8 mOhm @ 4A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 20.3nC @ 4.5V
Max Input Capacitance 1870pF @ 10V
Maximum Power Dissipation 1.2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerDI3333-8
Win Source Part Number 1033722-DMN2022UNS-7
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN2022UNS-7 CAD Model

Description

Introducing the DMN2022UNS-7 MOSFET from Diodes Incorporated

Diodes Incorporated presents the DMN2022UNS-7, a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) designed for a wide range of applications. This MOSFET is a testament to Diodes Incorporated's commitment to providing innovative solutions that meet the evolving needs of the electronics industry.

Key Features:

  • Low On-Resistance: The DMN2022UNS-7 boasts a low on-resistance, which means it can efficiently conduct electricity with minimal power loss, making it an excellent choice for power management applications.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is ideal for high-speed circuitry, ensuring that electronic devices can operate with improved performance and reliability.
  • Low Threshold Voltage: A low threshold voltage allows the DMN2022UNS-7 to turn on at lower voltages, which is beneficial for battery-operated devices, as it helps to conserve power and extend battery life.
  • Surface-Mount Package: The unit comes in a compact SOT-23 package, which is suitable for surface-mount technology (SMT), allowing for efficient assembly and saving valuable board space.

Applications:

The versatility of the DMN2022UNS-7 makes it suitable for a diverse array of applications, including but not limited to:

  • Power Management Circuits
  • DC/DC Converters
  • Battery Powered Systems
  • Load Switching
  • Motor Control Systems

Product Specifications:

The DMN2022UNS-7 operates with a continuous drain current of 7.5A and has a drain-source voltage (Vds) of 20V. Its maximum Rds(on) is 24mΩ at Vgs of 4.5V, and it also features a gate threshold voltage in the range of 0.8V to 1.5V.

Reliability and Quality Assurance:

Diodes Incorporated ensures that the DMN2022UNS-7 meets the highest standards of quality and reliability. Each MOSFET is rigorously tested to ensure it performs to the specifications under various conditions. With its robust design and Diodes Incorporated's commitment to quality, the DMN2022UNS-7 is a reliable component for any electronic system.

For detailed technical specifications, datasheets, and support resources, visit Diodes Incorporated's official website or contact their customer support team.

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Pricing & Ordering

Quantity Unit Price Ext. Price
195+ $0.2978 $58.0710
475+ $0.2444 $116.0900
735+ $0.2368 $174.0480
1,010+ $0.2292 $231.4920
1,305+ $0.2215 $289.0575
1,750+ $0.1986 $347.5500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
MOQ: 195 pcs
Order Increment : 1 pcs
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