The DMN2026UVT-7 is a high-performance, N-channel enhancement mode Field Effect Transistor (FET) designed and manufactured by Diodes Incorporated. This MOSFET is part of Diodes Incorporated's extensive range of semiconductor products and is ideal for a variety of applications in the electronics industry.
Key Features
- Low On-Resistance: The DMN2026UVT-7 boasts an extremely low on-resistance (RDS(on)), which enhances its efficiency by minimizing power loss during operation.
- High-Speed Switching: Engineered for fast switching, this MOSFET is suitable for high-frequency applications, offering improved performance in power management circuits.
- Low Threshold Voltage: The device operates at low gate threshold voltages, making it compatible with low-voltage drive signals and suitable for battery-powered applications.
- Surface-Mount Package: The DMN2026UVT-7 comes in a compact, surface-mount U-DFN2020-6 package that is designed for space-saving and is ideal for modern high-density circuit designs.
- Power Dissipation: With a power dissipation of 1.25W, this MOSFET can handle moderate power levels, suitable for a range of electronic applications.
Applications
The DMN2026UVT-7 is versatile and can be used in various applications including:
- Power Management
- DC/DC Converters
- Battery Powered Devices
- Load Switches
- Motor Control Circuits
Quality and Reliability
Diodes Incorporated is committed to providing high-quality products. The DMN2026UVT-7 is built to meet rigorous standards, ensuring reliability and performance in demanding environments. It is RoHS compliant, reflecting the company's dedication to environmental responsibility.
Technical Specifications
| Parameter |
Value |
| Drain-Source Voltage (VDS) |
20V |
| Continuous Drain Current (ID) |
7.5A |
| Power Dissipation (PD) |
1.25W |
| RDS(on) |
20mΩ at VGS = 4.5V |