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DMN2056U-13

Part No DMN2056U-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CHANNEL 20V 4A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Series -
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 38mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.3 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 339 pF @ 10 V
FET Feature -
Power Dissipation (Max) 940mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number DMN2056
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1376768-DMN2056U-13
Ultra Librarian 3D Model Ultra Librarian DMN2056U-13 CAD Model

Description

DMN2056U-13 MOSFET by Diodes Incorporated

The DMN2056U-13 is a high-performance, N-channel enhancement mode field-effect transistor (MOSFET) designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality semiconductor products. This MOSFET is part of Diodes Incorporated's extensive range of power management devices, specifically tailored for power switching and conversion applications across various electronic systems.

Key Features

  • Low On-Resistance: The DMN2056U-13 boasts an exceptionally low on-resistance (RDS(on)), which translates to reduced power loss and improved efficiency in operation. This feature is particularly beneficial in applications where power conservation is critical.
  • High Speed Switching: Engineered for fast switching speeds, this MOSFET is ideal for high-frequency applications, ensuring minimal switching losses and better performance in power conversion circuits.
  • Low Threshold Voltage: With a low gate threshold voltage (VGS(th)), the DMN2056U-13 is easily driven by low-voltage logic circuits, making it compatible with a wide range of control circuitry.
  • Surface Mount Package: The MOSFET comes in a compact SOT-23 package, which is suitable for surface mount technology (SMT), allowing for efficient use of PCB space and simplified assembly processes.

Applications

The DMN2056U-13 is versatile and can be used in a variety of applications, including:

  • Power management modules
  • DC/DC converters
  • Battery-powered devices
  • Motor control circuits
  • Load switching
  • Portable electronics

Product Specifications

The DMN2056U-13 operates with a continuous drain current (ID) of up to 4.7 A and can handle pulsed current loads significantly higher. The maximum drain-source voltage (VDSS) is rated at 20 V, and the device can operate within a wide temperature range, making it suitable for challenging environmental conditions. Its thermal performance is further enhanced by its power dissipation capabilities.

With a commitment to reliability and performance, the DMN2056U-13 MOSFET from Diodes Incorporated is an excellent choice for designers looking to optimize their power management systems with a high-quality, efficient, and robust semiconductor component.

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Pricing & Ordering

Quantity Unit Price Ext. Price
530+ $0.0948 $50.2440
1,130+ $0.0888 $100.3440
1,750+ $0.0858 $150.1500
2,510+ $0.0798 $200.2980
3,260+ $0.0768 $250.3680
4,070+ $0.0738 $300.3660
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,140 pieces
MOQ: 530 pcs
Order Increment : 1 pcs
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