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DMN2300UFL4-7

Part No DMN2300UFL4-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 2.11A 6DFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.11A
Maximum Rds On at Id,Vgs 195 mOhm @ 300mA, 4.5V
Gate-Source Threshold Voltage 950mV @ 250μA
Max Gate Charge 1.6nC @ 4.5V
Max Input Capacitance 64.3pF @ 25V
Maximum Power Dissipation 530mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package X2-DFN1310-6
Win Source Part Number 1033733-DMN2300UFL4-7
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMN2300UFL4-7 CAD Model

Description

DMN2300UFL4-7 MOSFET by Diodes Incorporated

The DMN2300UFL4-7 is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) offered by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This MOSFET is designed to deliver efficient power control and switching in a compact form factor, making it suitable for a variety of applications ranging from power management to load switching.

Key Features

  • Low On-Resistance: The DMN2300UFL4-7 features a low on-resistance (R<sub>DS(on)), which reduces power losses and improves overall efficiency, making it an ideal choice for power-sensitive applications.
  • High-Speed Switching: With its fast switching characteristics, this MOSFET is capable of operating at higher frequencies, which is beneficial for applications that require rapid switching, such as DC-DC converters.
  • Low Threshold Voltage: The low threshold voltage ensures that the MOSFET can be easily driven at lower gate voltages, simplifying the drive circuitry and reducing power consumption.
  • Ultra-Small Package: The DMN2300UFL4-7 comes in an ultra-small X2-DFN1006-3 package, which is ideal for space-constrained applications, allowing designers to minimize PCB space without sacrificing performance.

Applications

The versatility of the DMN2300UFL4-7 makes it suitable for a wide range of applications, including:

  • Power Management Circuits
  • Load/Power Switching
  • Battery Management Systems
  • DC-DC Converters
  • Portable and Mobile Devices
  • High-Efficiency Power Supplies

Product Specifications

The DMN2300UFL4-7 boasts an impressive set of specifications that cater to demanding power requirements:

  • Drain-Source Voltage (V<sub>DS): 20V
  • Continuous Drain Current (I<sub>D): 2.3A
  • Power Dissipation (P<sub>D): 0.46W
  • Operating Temperature Range: -55°C to +150°C

With its robust performance and compact packaging, the DMN2300UFL4-7 is a testament to Diodes Incorporated's commitment to providing innovative solutions that meet the evolving needs of modern electronics. Whether it's for power management, load switching, or any other application requiring efficient and reliable semiconductor components, the DMN2300UFL4-7 is an excellent choice for designers and engineers alike.

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Pricing & Ordering

Quantity Unit Price Ext. Price
360+ $0.1408 $50.6880
760+ $0.1319 $100.2440
1,180+ $0.1275 $150.4500
1,690+ $0.1186 $200.4340
2,195+ $0.1141 $250.4495
2,735+ $0.1097 $300.0295
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 93,000 pieces
MOQ: 360 pcs
Order Increment : 1 pcs
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