Product Overview: DMN26D0UFB4-7 from Diodes Incorporated

The DMN26D0UFB4-7 is a high-performance, N-channel enhancement mode field-effect transistor (FET) designed and manufactured by Diodes Incorporated, a leading global provider of semiconductors. This MOSFET is part of Diodes Incorporated's extensive range of discrete, logic, analog, and mixed-signal products.

Key Features

• Low On-Resistance: The DMN26D0UFB4-7 boasts a very low on-resistance (R<sub>DS(on)), which enhances its efficiency in various applications by minimizing conductive losses.
• High-Speed Switching: Designed for fast switching applications, this MOSFET is capable of operating at high frequencies, which is crucial for power management circuits and high-speed signal switching.
• Low Threshold Voltage: The low threshold voltage ensures that the transistor can be easily driven into the conductive state, making it suitable for low-voltage applications.
• Surface-Mount Package: The DMN26D0UFB4-7 comes in a compact DFN1006-3 package, also known as DFN2510P10E, which is ideal for space-constrained applications.
• Power Dissipation: With a power dissipation of 1.25W, this MOSFET can handle a moderate amount of power, making it suitable for a variety of electronic circuits.
• RoHS Compliant: The product is compliant with the RoHS directive, which means it is free from hazardous substances, making it environmentally friendly and suitable for use in a wide range of applications.

Applications

The DMN26D0UFB4-7 is designed for use in a range of applications, including:

• Load/Power Switching
• DC-DC Converters
• Battery Management Systems
• Charge and Discharge Switches for Battery Protection
• Power Management Functions

Technical Specifications

The DMN26D0UFB4-7 operates within a drain-source voltage (V<sub>DS) of 20V and has a continuous drain current (I<sub>D) of 0.68A. The device also features a low gate threshold voltage (V<sub>GS(th)) of 0.45V, which is typical for this category of MOSFETs.

For engineers and designers looking for a reliable and efficient N-channel MOSFET, the DMN26D0UFB4-7 from Diodes Incorporated offers a robust solution that combines performance with compact packaging, making it an excellent choice for a wide array of electronic designs.