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DMN2991UFZ-7B

Part No DMN2991UFZ-7B
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 550MA 3DFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 51 Weeks
Features N-Channel 550mA (Ta) 530mW (Ta) Surface Mount
Manufacturer Diodes Incorporated
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 3-XFDFN
Family Name DMN2991
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Quantity per package 10000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 868973-DMN2991UFZ-7B
Ultra Librarian 3D Model Ultra Librarian DMN2991UFZ-7B CAD Model

Description

Introducing the DMN2991UFZ-7B - A High-Performance MOSFET from Diodes Incorporated

The DMN2991UFZ-7B is a cutting-edge N-Channel enhancement mode Field Effect Transistor (FET) designed and manufactured by Diodes Incorporated, a leading global provider of high-quality semiconductor products. This MOSFET is a testament to Diodes Incorporated's commitment to delivering energy-efficient, compact solutions for a wide range of electronic applications.

Constructed with advanced trench technology, the DMN2991UFZ-7B boasts low on-resistance and a high continuous drain current, making it an excellent choice for power management tasks. This MOSFET is housed in an ultra-small DFN2020 package, which not only saves valuable board space but also enhances thermal performance due to its power dissipation capabilities.

Key Features of the DMN2991UFZ-7B:

  • Low On-Resistance: The device offers a very low R<sub>DS(on), reducing conduction losses and improving overall efficiency in applications.
  • High Continuous Drain Current: It is capable of supporting a high continuous drain current (I<sub>D), which is essential for applications requiring robust current handling capabilities.
  • Advanced Trench Technology: This technology enables the MOSFET to operate with enhanced switching performance, which is critical for high-speed switching applications.
  • Compact Footprint: The DFN2020 package is not only space-efficient but also offers excellent thermal conductivity, allowing for better heat dissipation.
  • Lead-Free and RoHS Compliant: The product adheres to environmental standards, ensuring that it meets global regulatory requirements for hazardous substances.

Applications:

The DMN2991UFZ-7B is suitable for a variety of applications, including:

  • Power Management Circuits
  • DC/DC Converters
  • Load Switches
  • Battery Management Systems
  • Computing and Storage Platforms

With its outstanding performance and reliability, the DMN2991UFZ-7B from Diodes Incorporated is an ideal choice for designers looking to optimize their power-sensitive designs. Whether you are working on portable devices, consumer electronics, or industrial systems, this MOSFET can help you achieve a more efficient and compact solution.

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Pricing & Ordering

Quantity Unit Price Ext. Price
715+ $0.0704 $50.3360
1,520+ $0.0660 $100.3200
2,355+ $0.0638 $150.2490
3,375+ $0.0593 $200.1375
4,380+ $0.0571 $250.0980
5,465+ $0.0549 $300.0285
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 398,000 pieces
MOQ: 715 pcs
Order Increment : 1 pcs
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