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DMN3033LSNQ-7

Part No DMN3033LSNQ-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 6A SC59 / N-Channel 30 V 6A (Ta) 1.4W (Ta) Surface Mount SC-59-3
Datasheet
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Diodes Incorporated
Packaging Reel - TR
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 6A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 30mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 755 pF @ 10 V
Power Dissipation (Max) 1.4W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Surface Mount
Supplier Device Package SC-59-3
Case / Package TO-236-3, SC-59, SOT-23-3
Base Product Number DMN3033
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number DMN3033LSNQ-7DIDKR,-DMN3033LSNQ-7DIDKR,-DMN3033LSNQ-7DITR,DMN3033LSNQ-7DITR,-DMN3033LSNQ-7DICT,DMN3033LSNQ-7DICT
Standard Package 3,000
Win Source Part Number 1324749-DMN3033LSNQ-7
Ultra Librarian 3D Model Ultra Librarian DMN3033LSNQ-7 CAD Model

Description

DMN3033LSNQ-7 - Diodes Incorporated

The DMN3033LSNQ-7 is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) designed by Diodes Incorporated, a leading global manufacturer and supplier of high-quality semiconductor products. This MOSFET is engineered to deliver efficient power control and conversion in a wide range of applications, making it an ideal choice for designers looking for a reliable and versatile component.

With its compact and robust design, the DMN3033LSNQ-7 is housed in a space-saving SOT-23 package, which is widely favored for its small footprint on printed circuit boards (PCBs). The package is designed to offer excellent thermal performance, ensuring that the device operates reliably even under high power and temperature conditions.

The DMN3033LSNQ-7 boasts a continuous drain current (ID) of 7.5A, making it suitable for handling moderate to high current loads with ease. The device features a low on-resistance (RDS(on)) of just 30 mΩ at VGS = 10V, which translates to reduced conduction losses and improved overall efficiency in electronic circuits. This low on-resistance is a key attribute for applications that demand high efficiency and low power dissipation.

With a maximum drain-source voltage (VDS) of 30V, the DMN3033LSNQ-7 provides a good balance between high voltage handling capability and low gate charge, which is essential for fast switching applications. The low gate threshold voltage (VGS(th)) enables the MOSFET to be driven at lower voltages, making it compatible with modern low-voltage logic circuits and microcontrollers.

The DMN3033LSNQ-7 is also characterized by its fast switching speeds, which are critical for reducing switching losses in power conversion systems. This makes the device an excellent choice for switch-mode power supplies, DC-DC converters, motor drives, and other power management applications where efficiency is of the utmost importance.

In summary, the DMN3033LSNQ-7 from Diodes Incorporated is a highly efficient, N-Channel MOSFET that provides designers with a compact, high-performance solution for a variety of power control applications. Its low on-resistance, high current capability, and fast switching speeds make it a versatile and essential component in modern electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
215+ $0.2342 $50.3530
525+ $0.1922 $100.9050
810+ $0.1862 $150.8220
1,110+ $0.1802 $200.0220
1,440+ $0.1742 $250.8480
1,925+ $0.1562 $300.6850
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,000 pieces
MOQ: 215 pcs
Order Increment : 1 pcs
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