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DMN3060LCA3-7

Part No DMN3060LCA3-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 3.9A X4DSN1006-3 / N-Channel 30 V 3.9A (Ta) 790mW Surface Mount X4-DSN1006-3
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Mfr Diodes Incorporated
Series -
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 8V
Rds On (Max) @ Id, Vgs 60mOhm @ 500mA, 8V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.677 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 192 pF @ 15 V
FET Feature -
Power Dissipation (Max) 790mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package X4-DSN1006-3
Package / Case 3-XFDFN
Base Product Number DMN3060
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Standard Package 10,000 pcs
Win Source Part Number 1381904-DMN3060LCA3-7
Ultra Librarian 3D Model Ultra Librarian DMN3060LCA3-7 CAD Model

Description

DMN3060LCA3-7 - N-Channel Enhancement Mode Field Effect Transistor

The DMN3060LCA3-7 is a high-performance, N-channel enhancement mode field effect transistor (FET) designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This compact and efficient MOSFET is a testament to Diodes Incorporated's commitment to providing power management solutions that meet the evolving needs of modern electronic applications.

The DMN3060LCA3-7 is housed in a small surface-mount package, specifically the SOT-23, which is known for its space-saving footprint. This makes it an ideal choice for space-constrained applications where board real estate is at a premium. Despite its diminutive size, this MOSFET is capable of delivering robust performance with a drain-source voltage (V<sub>DS) of 30V and a continuous drain current (I<sub>D) of up to 6.3A, ensuring efficient power handling capabilities.

Key features of the DMN3060LCA3-7 include a low on-resistance (R<sub>DS(on)) which minimizes conduction losses, and a low gate threshold voltage (V<sub>GS(th)) that enables operation at lower gate drive voltages, thus reducing power consumption. This combination of features makes the DMN3060LCA3-7 an excellent choice for a variety of power management tasks, particularly in applications such as DC-DC converters, power supply circuits, and load switches.

The device also boasts fast switching characteristics, which are essential for high-efficiency power conversion in modern electronics. The fast switching, combined with the low on-resistance, provides the benefit of reduced switching losses, further enhancing the overall efficiency of the system in which it is used.

Additionally, the DMN3060LCA3-7 is RoHS compliant, reflecting Diodes Incorporated's commitment to environmental sustainability. The product's compliance ensures that it meets the European Union's directives on the restriction of hazardous substances, making it suitable for use in a wide range of markets and applications where such compliance is required or desired.

In summary, the DMN3060LCA3-7 is a versatile and efficient N-channel MOSFET that offers designers a compact power management solution without compromising performance, making it an excellent choice for a diverse array of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7335 $51.3450
170+ $0.6018 $102.3060
260+ $0.5830 $151.5800
355+ $0.5642 $200.2910
460+ $0.5454 $250.8840
615+ $0.4890 $300.7350
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 106,153 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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