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DMN3150LW-7

Part No DMN3150LW-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 28V 1.6A SC70-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 28V
Continuous Drain Current at 25°C 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Input Capacitance 305pF @ 5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 350mW (Ta)
Maximum Rds On at Id,Vgs 88 mOhm @ 1.6A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-323
Dimension SC-70, SOT-323
Win Source Part Number 014440-DMN3150LW-7
Family Name DMN3150LW
Introduction Date August 05, 2008
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2025
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian DMN3150LW-7 CAD Model

Description

Introducing the DMN3150LW-7 MOSFET by Diodes Incorporated

The DMN3150LW-7 is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) from the renowned semiconductor manufacturer, Diodes Incorporated. This MOSFET is designed to deliver efficient power control and switching in a wide array of electronic applications. Its compact form factor, combined with its robust performance characteristics, makes it an ideal choice for space-constrained applications.

Enclosed in a small surface-mount package, specifically the SOT-323 package, the DMN3150LW-7 is engineered to achieve low on-resistance and a high continuous drain current. This combination ensures minimal power loss and heat generation, which is crucial for maintaining reliability and longevity in electronic circuits. The device is characterized by a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 1.2A, which allows for efficient handling of high current operations.

One of the key features of the DMN3150LW-7 is its low threshold voltage (VGS(th)), which enables the MOSFET to be easily driven into conduction at lower gate voltages. This is particularly beneficial for battery-operated devices, where power conservation is paramount. Additionally, the device exhibits fast switching speeds, which is essential for high-frequency applications.

The DMN3150LW-7 is also known for its robustness, with built-in protection against electrostatic discharge (ESD). This feature safeguards the MOSFET from sudden electrical surges that can occur during handling or operation, thus ensuring a more reliable performance in sensitive electronic equipment.

Applications for the DMN3150LW-7 are diverse, ranging from power management solutions in portable electronics to switch-mode power supplies, and from load switching to power conversion systems. Its versatility and reliability make it a preferred choice among design engineers looking to optimize their power circuitry.

Overall, the DMN3150LW-7 from Diodes Incorporated stands out as a high-efficiency, space-saving solution for modern electronic designs, offering both performance and reliability in a miniature package.

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Pricing & Ordering

Quantity Unit Price Ext. Price
755+ $0.0766 $57.8330
1,840+ $0.0628 $115.5520
2,850+ $0.0609 $173.5650
3,925+ $0.0589 $231.1825
5,075+ $0.0570 $289.2750
6,790+ $0.0511 $346.9690
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 200,000 pieces
MOQ: 755 pcs
Order Increment : 1 pcs
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