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DMN32D2LDF-7

Part No DMN32D2LDF-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 0.4A SOT353 / Trans MOSFET N-CH 30V 0.4A 5-Pin SOT-353 T/R
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual) Common Source
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 400mA
Maximum Rds On at Id,Vgs 1.2 Ohm @ 100mA, 4V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Input Capacitance 39pF @ 3V
Maximum Power Dissipation 280mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-353
Win Source Part Number 080577-DMN32D2LDF-7
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name DMN32D2LDF
Introduction Date January 29, 2008
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian DMN32D2LDF-7 CAD Model

Description

Product Overview: DMN32D2LDF-7 from Diodes Incorporated

The DMN32D2LDF-7 is a high-performance, N-channel MOSFET designed and manufactured by Diodes Incorporated, a leading company in the semiconductor market. This product is a testament to Diodes Incorporated's commitment to providing innovative solutions that enhance the efficiency and performance of electronic circuits.

Key Features

  • Low On-Resistance: The DMN32D2LDF-7 boasts an extremely low on-resistance (R<sub>DS(on)), which translates to reduced power loss and improved efficiency in applications where it is deployed.
  • High-Speed Switching: Engineered for fast switching performance, this MOSFET is ideal for high-frequency applications, ensuring minimal delay and high efficiency in power conversion and management circuits.
  • Small Package: The device comes in a compact DFN2020-6 (Type D) package, making it suitable for space-constrained applications without sacrificing performance.
  • Low Threshold Voltage: With a low threshold voltage, the DMN32D2LDF-7 ensures easy drive capability and is suitable for low voltage applications, enhancing its versatility in various circuit designs.

Applications

The DMN32D2LDF-7 is designed to cater to a wide array of applications, making it a versatile choice for designers. It is commonly used in:

  • Power Management Circuits
  • DC-DC Converters
  • Load Switches
  • Battery Management Systems
  • Motor Control Modules

Quality and Reliability

Diodes Incorporated ensures that the DMN32D2LDF-7 meets strict quality and reliability standards. The device is RoHS compliant, reflecting the company's commitment to environmental sustainability. Additionally, it is characterized for operation from -55°C to +150°C, making it reliable in a broad range of temperature conditions.

Conclusion

In conclusion, the DMN32D2LDF-7 from Diodes Incorporated is an excellent choice for designers looking for a high-efficiency, high-speed, and reliable N-channel MOSFET. Its compact form factor, low on-resistance, and fast switching capabilities make it a valuable component in a variety of electronic systems. With its robust design and adherence to quality standards, this MOSFET is set to deliver outstanding performance in your next project.

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Pricing & Ordering

Quantity Unit Price Ext. Price
350+ $0.1434 $50.1900
850+ $0.1177 $100.0450
1,320+ $0.1140 $150.4800
1,815+ $0.1103 $200.1945
2,345+ $0.1067 $250.2115
3,140+ $0.0956 $300.1840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 68,850 pieces
MOQ: 350 pcs
Order Increment : 1 pcs
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