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DMN3300U-7

Part No DMN3300U-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 2A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Input Capacitance 193pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 150 mOhm @ 4.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 080578-DMN3300U-7
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name DMN3300U
Introduction Date December 12, 2007
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2025
Ultra Librarian 3D Model Ultra Librarian DMN3300U-7 CAD Model

Description

Introducing the DMN3300U-7 N-Channel MOSFET by Diodes Incorporated

The DMN3300U-7 is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) designed and manufactured by Diodes Incorporated, a leading global provider of discrete, analog, and mixed-signal semiconductors. This MOSFET is housed in an ultra-small SOT-23 package, making it an ideal choice for space-constrained applications where efficiency and thermal performance are critical.

Key Features and Benefits

  • Low On-Resistance: The DMN3300U-7 boasts an exceptionally low on-resistance (R<sub>DS(on)) of just 65 mOhms at V<sub>GS = 4.5V, contributing to reduced conduction losses and improved power efficiency in your circuit designs.
  • High Continuous Drain Current: It supports a high continuous drain current (I<sub>D) of up to 3.7A, allowing it to handle significant power for its compact size.
  • Enhanced Thermal Performance: The device's power dissipation is optimized through its small footprint, which aids in heat dissipation and enhances overall thermal performance.
  • Low Threshold Voltage: A low threshold voltage (V<sub>GS(th)) ensures that the MOSFET can be easily driven in low voltage applications, offering design flexibility and compatibility with low-voltage logic levels.
  • High-Speed Switching: The DMN3300U-7 is designed for fast switching applications, which is crucial for reducing switching losses and improving the efficiency of power conversion systems.

Applications

The DMN3300U-7 is versatile and can be used in a wide range of applications, including:

  • Power Management Circuits
  • DC/DC Converters
  • Load Switches
  • Battery Management Systems
  • Motor Control

Reliability and Compliance

Diodes Incorporated ensures that the DMN3300U-7 meets rigorous standards for reliability and performance. It is RoHS compliant, reflecting a commitment to environmental responsibility by eliminating hazardous substances from the manufacturing process. Moreover, the product is characterized for operation from -55°C to +150°C, guaranteeing stable performance across a wide temperature range.

With its combination of low on-resistance, high current capability, and fast switching performance, the DMN3300U-7 from Diodes Incorporated stands out as a superior choice for designers looking to optimize their power-sensitive applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.0024 $50.0600
61+ $1.6430 $100.2230
95+ $1.5917 $151.2115
130+ $1.5403 $200.2390
168+ $1.4890 $250.1520
225+ $1.3350 $300.3750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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