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DMN4030LK3-13

Part No DMN4030LK3-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 9.4A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 9.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 12.9nC @ 10V
Max Input Capacitance 604pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.14W (Ta)
Maximum Rds On at Id,Vgs 30 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 080580-DMN4030LK3-13
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN4030LK3-13 CAD Model

Description

Product Overview: DMN4030LK3-13 from Diodes Incorporated

The DMN4030LK3-13 is a cutting-edge N-channel enhancement mode Field Effect Transistor (FET) manufactured by Diodes Incorporated. This MOSFET is designed for high-speed switching applications and is housed in a robust and compact DPAK package, providing a space-efficient solution for modern electronic circuits.

With its low on-resistance of just 8.4 mΩ at VGS = 10V, the DMN4030LK3-13 delivers high efficiency and reduces power loss, making it an ideal choice for power management tasks. This feature is particularly beneficial in applications where energy conservation is paramount, such as battery-powered devices, portable electronics, and energy-sensitive systems.

Key Features:

  • Low On-Resistance: The device boasts a low on-resistance, ensuring minimal voltage drop and heat generation during operation, which translates to higher efficiency and reliability.
  • High Continuous Drain Current: It supports a high continuous drain current (ID) of up to 30A, making it capable of handling high current loads without performance degradation.
  • Fast Switching Speed: The FET's fast switching capabilities enable it to respond quickly to control signals, which is crucial for applications requiring rapid power modulation.
  • Gate Charge: With a low total gate charge (Qg) of 15.7 nC, the DMN4030LK3-13 ensures efficient gate control, reducing switching losses and improving overall performance.

Applications:

The DMN4030LK3-13 is versatile and can be used in various applications, including:

  • Power Supply Circuits
  • DC-DC Converters
  • Motor Drives
  • Battery Management Systems
  • Load Switches

With its robust performance characteristics, the DMN4030LK3-13 from Diodes Incorporated is a reliable and efficient solution for designers looking to optimize their power management strategies in a wide array of electronic devices. Its integration into a system not only ensures efficient power handling but also contributes to the long-term durability and stability of the application it serves.

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Pricing & Ordering

Quantity Unit Price Ext. Price
200+ $0.2924 $58.4800
485+ $0.2399 $116.3515
750+ $0.2324 $174.3000
1,030+ $0.2249 $231.6470
1,330+ $0.2175 $289.2750
1,780+ $0.1950 $347.1000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 37,500 pieces
MOQ: 200 pcs
Order Increment : 1 pcs
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