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DMN5L06VA-7

Part No DMN5L06VA-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 50V 0.28A SOT-563
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 280mA
Maximum Rds On at Id,Vgs 3 Ohm @ 200mA, 2.7V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Input Capacitance 50pF @ 25V
Maximum Power Dissipation 150mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-563
Win Source Part Number 080584-DMN5L06VA-7
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN5L06VA-7 CAD Model

Description

The DMN5L06VA-7 from Diodes Incorporated is a high-performance, dual N-channel enhancement mode field-effect transistor (MOSFET) designed for efficient power management in a compact SOT-563 package. This component is particularly suited for portable and battery-powered applications where space and power efficiency are critical.

Key Features

  • Low On-Resistance: The DMN5L06VA-7 features low on-resistance, which minimizes conduction losses and improves overall efficiency, making it ideal for high-efficiency power management circuits.
  • Dual N-Channel: The dual N-channel configuration allows for the design of compact circuits with fewer components, saving space and reducing overall system cost.
  • High-Speed Switching: Fast switching speeds of this MOSFET make it suitable for high-frequency applications, including DC-DC converters and power switches.
  • Voltage and Current Ratings: It has a drain-source voltage (Vds) of 50V, a continuous drain current (Id) of 540mA, and a power dissipation of 625mW, providing a good balance between power handling and size.
  • Low Threshold Voltage: The low threshold voltage ensures low-voltage operation, enabling the use of this MOSFET in logic level applications.

Applications

The DMN5L06VA-7 is versatile and can be used in various applications, including:

  • Power Management for Portable Devices
  • DC-DC Converters
  • Battery Management Systems
  • Load/Power Switching
  • Motor Control Circuits

Reliability and Quality

Diodes Incorporated is known for its commitment to quality and reliability. The DMN5L06VA-7 is produced with the highest standards, ensuring stable performance and longevity even in demanding conditions. Its small form factor does not compromise its durability, making it a reliable choice for designers and engineers.

Conclusion

In summary, the DMN5L06VA-7 MOSFET from Diodes Incorporated is an efficient, reliable, and space-saving solution for a wide range of applications requiring low on-resistance, high-speed switching, and low-voltage operation. Its dual N-channel configuration and compact size make it an excellent choice for modern, high-performance electronic designs.

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