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DMN601K-7-F

Part No DMN601K-7-F
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 300MA SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Input Capacitance 50pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 350mW (Ta)
Maximum Rds On at Id,Vgs 2 Ohm @ 500mA, 10V
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 080586-DMN601K-7-F
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Motor Drive & Control
Ultra Librarian 3D Model Ultra Librarian DMN601K-7-F CAD Model

Description

Introducing the DMN601K-7-F MOSFET from Diodes Incorporated

The DMN601K-7-F is a cutting-edge N-channel enhancement mode Field Effect Transistor (MOSFET) designed and manufactured by Diodes Incorporated, a leading company in the semiconductor market. This MOSFET is part of Diodes Incorporated's extensive range of high-performance, energy-efficient power management components that cater to a wide array of electronic applications.

Constructed with advanced trench technology, the DMN601K-7-F provides excellent R<sub>DS(on) performance, which ensures reduced conduction losses and enhances overall efficiency. This makes it an ideal choice for power management tasks where minimizing on-state resistance is crucial for achieving high efficiency, such as in power supplies, DC-DC converters, and load switches.

Featuring a compact form factor, the DMN601K-7-F comes in an SOT-23 package, which is highly favored for space-constrained applications. This small footprint does not compromise its capability to handle a continuous drain current of up to 630mA, making it a robust option for a variety of designs.

The DMN601K-7-F operates over a wide temperature range, maintaining stability and performance even under extreme conditions. This characteristic, along with its fast switching speed, contributes to its reliability and suitability for high-performance environments.

With a maximum drain-source voltage (V<sub>DS) of 60V, this MOSFET can easily manage moderate voltage applications. Its threshold voltage (V<sub>GS(th)) is specified to be within a range that ensures a low gate drive requirement, which is beneficial for power-sensitive designs.

Moreover, the DMN601K-7-F is designed to be environmentally friendly, complying with RoHS standards which restrict the use of certain hazardous substances in electrical and electronic equipment. This commitment to sustainability makes it a conscientious choice for manufacturers looking to create eco-friendly products.

In summary, the DMN601K-7-F from Diodes Incorporated is a robust, efficient, and compact MOSFET that offers excellent performance for a variety of electronic applications. Its low on-resistance, high thermal performance, and compliance with environmental standards make it a top choice for designers and engineers seeking reliable and responsible power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,215+ $0.0412 $50.0580
2,960+ $0.0338 $100.0480
4,590+ $0.0327 $150.0930
6,310+ $0.0317 $200.0270
8,170+ $0.0306 $250.0020
10,910+ $0.0275 $300.0250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 1215 pcs
Order Increment : 1 pcs
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