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DMN6040SK3-13

Part No DMN6040SK3-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 60V 20A TO252
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 22.4nC @ 10V
Max Input Capacitance 1287pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 42W (Tc)
Maximum Rds On at Id,Vgs 40 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1033782-DMN6040SK3-13
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMN6040SK3-13 CAD Model

Description

DMN6040SK3-13 - N-Channel Enhancement Mode Field Effect Transistor

The DMN6040SK3-13 from Diodes Incorporated is a high-performance, N-Channel enhancement mode field effect transistor (MOSFET) designed for a wide range of applications. This power semiconductor is particularly suited for power management tasks, including DC-DC converters, load switches, and power supply circuits in consumer electronics, computing devices, and portable equipment.

Key Features

  • Low On-Resistance: The device boasts a low on-resistance (R<sub>DS(on)) of just 6.5mΩ at V<sub>GS = 10V, which improves overall efficiency by reducing conduction losses.
  • High Continuous Drain Current: With a continuous drain current (I<sub>D) of up to 60A, this MOSFET can handle high current applications with ease.
  • PowerDI™5060-8 Package: Enclosed in a thermally efficient PowerDI™5060-8 package, the DMN6040SK3-13 ensures excellent heat dissipation and a compact footprint on printed circuit boards (PCBs).
  • High Power and Current Handling: The device is capable of withstanding a maximum drain-source voltage (V<sub>DSS) of 40V, making it suitable for a variety of power applications.
  • Fast Switching Speed: Fast switching characteristics are a hallmark of this MOSFET, enabling high-efficiency operation in switching applications.
  • RoHS Compliant: The DMN6040SK3-13 is compliant with RoHS standards, ensuring that it meets environmental and safety requirements by avoiding the use of hazardous substances.

Applications

The DMN6040SK3-13 is ideal for a range of applications, including:

  • Power supply circuits in personal computers, laptops, and servers
  • DC-DC converters for consumer electronics such as smartphones and tablets
  • High-efficiency power management in battery-powered devices
  • Load switch applications
  • Motor control circuits in portable tools and appliances

With its robust design and high-performance attributes, the DMN6040SK3-13 from Diodes Incorporated is an excellent choice for designers looking to improve power efficiency and reliability in their electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
195+ $0.2618 $51.0510
410+ $0.2452 $100.5320
635+ $0.2370 $150.4950
910+ $0.2204 $200.5640
1,180+ $0.2121 $250.2780
1,475+ $0.2038 $300.6050
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,120 pieces
MOQ: 195 pcs
Order Increment : 1 pcs
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