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DMN6069SE-13

Part No DMN6069SE-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 4.3A/10A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 4.3A (Ta), 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 69mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 825 pF @ 30 V
Power Dissipation (Max) 2.2W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223-3
Package / Case TO-261-4, TO-261AA
Base Product Number DMN6069
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 585525-DMN6069SE-13
Ultra Librarian 3D Model Ultra Librarian DMN6069SE-13 CAD Model

Description

Introducing the DMN6069SE-13 MOSFET from Diodes Incorporated

The DMN6069SE-13 is a high-performance, N-channel enhancement mode field effect transistor (MOSFET) designed and manufactured by Diodes Incorporated, a leading provider in the semiconductor market. This MOSFET is an optimal solution for a wide range of applications requiring efficient power management and high-speed switching capabilities.

Constructed with advanced trench technology, the DMN6069SE-13 delivers excellent R<sub>DS(on) and low gate charge, making it highly efficient in minimizing on-state losses and improving the overall efficiency of electronic systems. This feature is particularly beneficial in applications such as power supplies, DC-DC converters, and motor drives where energy efficiency is paramount.

The device is encapsulated in a compact SOT-223 package, which not only ensures a small footprint on printed circuit boards (PCBs) but also offers excellent thermal performance. The compact size of the DMN6069SE-13 makes it an ideal choice for space-constrained applications while still providing the thermal and electrical performance required for reliable operation.

With a continuous drain current (I<sub>D) of 6.5A and a drain-source voltage (V<sub>DS) of 60V, the DMN6069SE-13 is capable of handling moderate power levels, making it versatile for various electronic circuits. Additionally, its fast switching speed is instrumental in reducing switching losses, further enhancing the efficiency of applications where it is used.

The DMN6069SE-13 also features a low threshold voltage (V<sub>GS(th)), which allows for the device to be easily driven by low-voltage logic signals, thereby simplifying the interface with microcontrollers and other logic devices. This characteristic is especially useful in low-voltage applications that require precise control over the switching of power stages.

Overall, the DMN6069SE-13 from Diodes Incorporated is a robust and reliable component that offers a blend of efficiency, compactness, and performance. It is an excellent choice for designers looking to optimize their power management systems in a variety of electronic applications.

For detailed specifications and application notes, designers and engineers are encouraged to consult the datasheet and technical resources available on the Diodes Incorporated website.

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.4366 $50.2090
280+ $0.3583 $100.3240
435+ $0.3471 $150.9885
600+ $0.3359 $201.5400
770+ $0.3247 $250.0190
1,035+ $0.2911 $301.2885
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,500 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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