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DMN6069SE

Part No DMN6069SE
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description Low on-resistance
Sample
Rohs State rohs
ECAD Module
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Manufacturer Diodes Incorporated
Win Source Part Number 1168212-DMN6069SE
Manufacturer Homepage www.diodes.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN6069SE CAD Model

Description

Introducing the DMN6069SE N-Channel Enhancement Mode MOSFET by Diodes Incorporated

The DMN6069SE is a high-performance, N-Channel enhancement mode field effect transistor (MOSFET) brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This MOSFET is designed to deliver efficient power management and conversion in a wide range of applications. The DMN6069SE is ideal for use in power supply circuits, motor control systems, and as a switch in various electronic devices.

This MOSFET is fabricated using advanced trench technology to provide excellent R<sub>DS(on) and low gate charge performance. This results in a product that offers both high efficiency and reliability, which is crucial for maintaining the longevity and performance of electronic systems. The DMN6069SE can handle continuous drain currents up to 60A, making it suitable for high-power applications.

The DMN6069SE operates at a maximum junction temperature of 150°C, ensuring stability and performance even under high temperature conditions. With a threshold voltage in the range of 1.0V to 2.5V, this MOSFET is easily driven by low-voltage logic circuits, reducing the need for additional level-shifting components.

This device is housed in a robust, surface-mount SO-8 package, designed to optimize board space without compromising thermal performance. With its compact footprint, the DMN6069SE is perfect for space-constrained applications where efficient power management is essential.

Key features of the DMN6069SE include:

  • Low R<sub>DS(on) for improved efficiency
  • High continuous drain current (I<sub>D) of 60A
  • Maximum junction temperature of 150°C for high-temperature operation
  • Low threshold voltage for compatibility with low-voltage logic
  • Advanced trench MOSFET technology
  • Compact SO-8 package for space-saving applications

Diodes Incorporated's commitment to quality and performance is evident in the DMN6069SE, making it a smart choice for designers looking to enhance their power management systems. With its robust features and reliable performance, the DMN6069SE is set to become a staple in the electronics industry for a variety of power handling and switching applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.2855 $57.8475
110+ $1.0545 $115.9950
170+ $1.0210 $173.5700
235+ $0.9887 $232.3445
305+ $0.9552 $291.3360
405+ $0.8570 $347.0850
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,400 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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