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DMN6070SY-13

Part No DMN6070SY-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 4.1A SOT89-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 51 Weeks
Features N-Channel 60 V 4.1A (Ta) 2.1W (Ta) Surface Mount SOT-89-3
Manufacturer Diodes Incorporated
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package TO-243AA
Case / Package SOT-89-3
Family Name DMN6070
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 2500
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 869026-DMN6070SY-13
Ultra Librarian 3D Model Ultra Librarian DMN6070SY-13 CAD Model

Description

DMN6070SY-13 N-Channel Enhancement Mode Field Effect Transistor by Diodes Incorporated

The DMN6070SY-13 is a high-performance, N-Channel enhancement mode field effect transistor (FET) designed and manufactured by Diodes Incorporated. This MOSFET is a testament to the company's commitment to providing energy-efficient, compact, and reliable components for a wide range of electronic applications.

With its surface mount package, the DMN6070SY-13 is optimized for space-constrained applications. It is housed in a small SOP-8 package, which is ideal for automated assembly processes, and it offers a low on-resistance, making it highly efficient for power management tasks. The transistor operates at 60V drain-source voltage (V<sub>DS), which allows it to handle moderate power levels while maintaining a high level of performance.

The DMN6070SY-13 boasts a continuous drain current (I<sub>D) of up to 6.3A at 25°C, ensuring that it can support a wide range of applications from power supplies to motor drives. Its low threshold voltage ensures that it can be easily driven by low-voltage logic signals, making it compatible with modern microcontrollers and digital circuits.

This MOSFET also features fast switching speeds, which are critical for reducing energy losses during the switching process. This makes the DMN6070SY-13 an excellent choice for high-frequency applications such as DC-DC converters, where efficiency is paramount. Additionally, its robust thermal performance ensures reliability and a long operational lifespan even in demanding conditions.

Diodes Incorporated has equipped the DMN6070SY-13 with built-in protection features such as over-temperature and over-current protection, which safeguard the device and the systems it is used within against potential damage from abnormal operating conditions.

In summary, the DMN6070SY-13 from Diodes Incorporated is a versatile and efficient N-Channel MOSFET that offers the perfect balance between power handling, efficiency, and compactness. It is an excellent choice for designers looking to optimize their power management systems in terms of both performance and size.

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.2765 $51.1525
445+ $0.2269 $100.9705
685+ $0.2198 $150.5630
945+ $0.2127 $201.0015
1,220+ $0.2056 $250.8320
1,630+ $0.1844 $300.5720
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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